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K3385 PDF Data sheet ( 特性 )

部品番号 K3385
部品説明 2SK3385
メーカ NEC
ロゴ NEC ロゴ 



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K3385 Datasheet, K3385 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3385
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3385 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3385
PACKAGE
TO-251
FEATURES
Low On-state Resistance
5 RDS(on)1 = 28 mMAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 45 mMAX. (VGS = 4.0 V, ID = 15 A)
Low Ciss : Ciss = 1500 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package
2SK3385-Z
TO-252
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
5 Drain Current (Pulse) Note1
5 Total Power Dissipation (TC = 25°C)
ID(DC)
ID(pulse)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
5 Single Avalanche Current Note2
5 Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
±30
±100
36
1.0
150
–55 to +150
22
48
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW 10 µs, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V
THERMAL RESISTANCE
5 Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
3.47 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14472EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999,2000

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