DataSheet.jp

1SMB5913A データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 1SMB5913A
部品説明 SILICON ZENER DIODES
メーカ Bruckewell
ロゴ Bruckewell ロゴ 

Total 5 pages
		

No Preview Available !

1SMB5913A Datasheet, 1SMB5913A PDF,ピン配置, 機能
1SMB5913A-1SMB5956A
Vz : 3.3 - 200 Volts
PD : 3.0 Watts
Features
Complete Voltage Range 3.3 to 200 Volts
High peak reverse power dissipation
Flat handling surface for accurate placement
Low leakage current
RoHS compliant package
Mechanical Data
Case : SMB Molded plastic
Epoxy : UL94V-0 rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.93 gram
Packing & Order Information
3,000/Reel
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Symbol
Parameter
Maximum Steady State Power Dissipation at TL = 75 °C
PD Measured at Zero Lead Length
Derate Above 75 °C
RθJL
Thermal Resistance From Junction to Lead
Maximum Steady State Power Dissipation at TA = 25 °C
PD Measured at Zero Lead Length
RθJA
Derate Above 75 °C
Thermal Resistance From Junction to Ambient
VF Maximum Forward Voltage at IF = 200 mA
TJ Junction Temperature Range
Tstg Storage Temperature Range
Value
30
40
25
550
4.4
226
1.5
-65 to +150
-65 to +150
Unit
W
mW/°C
°C/W
W
mW/°C
°C/W
V
°C
°C
Publication Order Number: [1SMB5913A-1SMB5956A]
© Bruckewell Technology Corporation Rev. A -2014

1 Page





ページ 合計 : 5 ページ
PDF
ダウンロード
[ 1SMB5913A.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
1SMB5913

There is a function of PLASTIC SURFACE MOUNT ZENER DIODES 3 WATTS 3.3.200 VOLTS.

Motorola  Inc
Motorola Inc
1SMB5913A

There is a function of SILICON ZENER DIODES.

EIC discrete Semiconductors
EIC discrete Semiconductors
1SMB5913A

There is a function of Silicon Zener Diodes.

LGE
LGE
1SMB5913A

There is a function of SILICON ZENER DIODES.

Bruckewell
Bruckewell

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap