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1N4448WS PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 1N4448WS
部品説明 SMD Small Signal Switching Diodes
メーカ Diotec Semiconductor
ロゴ Diotec Semiconductor ロゴ 

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1N4448WS Datasheet, 1N4448WS PDF,ピン配置, 機能
1N4148WS, 1N4448WS
1N4148WS, 1N4448WS
SMD Small Signal Switching Diodes
SMD Kleinsignal-Schaltdioden
Version 2016-06-07
~SOD-323
1.7 ±0.1
Typical Applications
Signal processing,
High-speed switching
Commercial grade 1)
Type
Code
2.5 ±0.2
Features
Very high switching speed
Low junction capacitance
Low leakage current
Compliant to RoHS, REACH,
Conflict Minerals 1)
Mechanical Data 1)
Taped and reeled
Dimensions - Maße [mm]
Type Code
1N4148WS = W2 or A
1N4448WS = W2
Weight approx.
Case material
Solder & assembly conditions
IFAV = 150 mA
VF1 < 1.25 V
Tjmax = 150°C
VRRM
IFSM1
trr
= 75 V
=1A
< 4 ns
RoHS
Pb
3000 / 7“
0.005 g
UL 94V-0
260°C/10s
MSL = 1
Typische Anwendungen
Signalverarbeitung,
Schnelles Schalten
Standardausführung 1)
Besonderheiten
Extrem schnelles Schalten
Niedrige Sperrschichtkapazität
Niedriger Sperrstrom
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanische Daten 1)
Gegurtet auf Rolle
Gewicht ca.
Gehäusematerial
Löt- und Einbaubedingungen
Maximum ratings (TA = 25°C)
Power dissipation − Verlustleistung
Max. average forward current – Dauergrenzstrom (dc)
Repetitive peak forward current – Periodischer Spitzenstrom
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
tp ≤ 1 s
tp ≤ 1 µs
Repetitive peak reverse voltage – Periodische Spitzensperrspannung
Non repetitive peak reverse voltage – Stoßspitzensperrspannung
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Grenzwerte (TA = 25°C)
1N4148WS, 1N4448WS
Ptot 200 mW 2)
IFAV 150 mA 2)
IFRM 300 mA 2)
IFSM 350 mA 2)
IFSM 1 A
VRRM
75 V
VRSM
100 V 3)
Tj -55...+150°C
TS -55…+150°C
Characteristics (Tj = 25°C)
Forward voltage
Durchlass-Spannung
Leakage current – Sperrstrom
Leakage current – Sperrstrom, Tj = 125°C
IF = 1 mA
IF = 5 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 20 V
VR = 75 V
VR = 20 V
VR = 75 V
Kennwerte (Tj = 25°C)
1N4148WS 1N4448WS
VF < 0.75 V
VF – 0.62...0.72 V
VF
< 0.855 V
< 0.855 V
VF < 1.0 V < 1.0 V
VF
< 1.25 V
< 1.25 V
IR
< 25 nA
< 25 nA
IR
< 1 µA
< 100 nA
IR
< 30 µA
< 30 µA
IR
< 50 µA
< 50 µA
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal – Montage auf Leiterplatte mit 3 mm2 Lötpad je Anschluss
3 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
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