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PDF IXFH8N80 Data sheet ( Hoja de datos )
| Número de pieza | IXFH8N80 | |
| Descripción | Power MOSFETs | |
| Fabricantes | IXYS | |
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Preliminary Data Sheet
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on)
trr
IXFH8N80 800V 8A
IXFH9N80 800V 9A
1.1Ω 250 ns
0.9Ω 250 ns
TO-247 AD (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
8N80
9N80
8N80
9N80
8N80
9N80
800
800
±20
±30
8
9
32
36
8
9
V
V
V
V
A
A
A
A
A
A
EAR
dv/dt
PD
TJ
TJM
Tstg
Md
Weight
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
Mounting torque
18 mJ
5 V/ns
180 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
VDSS temperature coefficient
VDS = VGS, ID = 2.5 mA
VGS(th) temperature coefficient
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2%
800
0.088
2
-0.257
V
%/K
4.5 V
%/K
±100 nA
250 µA
1 mA
8N80
9N80
1.1 Ω
0.9 Ω
© 1997 IXYS All rights reserved
TO-247 SMD*
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
*Add suffix letter "S" for surface mountable
package
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
96527A (8/97)
1 page | ||
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| PDF Descargar | [ Datasheet IXFH8N80.PDF ] | |
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