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MTD030N10QJ3のメーカーはCystech Electonicsです、この部品の機能は「N-Channel Enhancement Mode Power MOSFET」です。 |
部品番号 | MTD030N10QJ3 |
| |
部品説明 | N-Channel Enhancement Mode Power MOSFET | ||
メーカ | Cystech Electonics | ||
ロゴ | |||
このページの下部にプレビューとMTD030N10QJ3ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
MTD030N10QJ3
Spec. No. : C168J3
Issued Date : 2016.03.07
Revised Date : 2016.04.27
Page No. : 1/9
BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=10A
100V
29A
23mΩ(typ)
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTD030N10QJ3
Outline
TO-252(DPAK)
G:Gate D:Drain
S:Source
G DS
Ordering Information
Device
MTD030N10QJ3-0-T3-G
Package
Shipping
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD030N10QJ3
CYStek Product Specification
1 Page CYStech Electronics Corp.
Spec. No. : C168J3
Issued Date : 2016.03.07
Revised Date : 2016.04.27
Page No. : 3/9
td(ON) *1, 2 - 10 -
tr *1, 2
td(OFF) *1, 2
-
-
24
32.2
-
-
ns
tf *1, 2
- 13.4 -
Ciss - 705 -
Coss
- 123 - pF
Crss - 120 -
Rg - 1 - Ω
Source-Drain Diode
IS *1
ISM *3
-
-
-
-
29
116
A
VSD *1
- 0.74 1 V
trr - 32 - ns
Qrr - 36 - nC
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
VDS=50V, ID=10A, VGS=10V,
RG=3Ω
VGS=0V, VDS=25V, f=1MHz
f=1MHz
IS=1A, VGS=0V
IF=10A, dIF/dt=100A/μs
Recommended soldering footprint
MTD030N10QJ3
CYStek Product Specification
3Pages CYStech Electronics Corp.
Spec. No. : C168J3
Issued Date : 2016.03.07
Revised Date : 2016.04.27
Page No. : 6/9
Typical Characteristics(Cont.)
50
45
40
35
30
25
20
15
10
5
0
0
Typical Transfer Characteristics
VDS=10V
24 68
VGS, Gate-Source Voltage(V)
10
1000
900
800
700
600
500
400
300
200
100
0
0.001
Single Pulse Power Rating, Junction to Case
TJ(MAX)=150°C
TC=25°C
RθJC=2.5°C/W
0.01 0.1
1
Pulse Width(s)
10 100
1
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Transient Thermal Response Curves
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTD030N10QJ3
CYStek Product Specification
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ MTD030N10QJ3 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MTD030N10QJ3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |