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2N6660のメーカーはMicrochipです、この部品の機能は「N-Channel Enhancement-Mode Vertical DMOS FET」です。 |
部品番号 | 2N6660 |
| |
部品説明 | N-Channel Enhancement-Mode Vertical DMOS FET | ||
メーカ | Microchip | ||
ロゴ | |||
このページの下部にプレビューと2N6660ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
2N6660
N-Channel, Enhancement-Mode, Vertical DMOS FET
Features
• Free from secondary breakdown
• Low power drive requirement
• Ease of paralleling
• Low CISS and fast switching speeds
• Excellent thermal stability
• Integral source-drain diode
• High input impedance and high gain
Applications
• Motor controls
• Converters
• Amplifiers
• Switches
• Power supply circuits
• Drivers: relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.
Description
2N6660 is an enhancement-mode (normally-off) tran-
sistor that utilizes a vertical DMOS structure and a well-
proven silicon-gate manufacturing process. This com-
bination produces a device with the power-handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS struc-
tures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very-
low threshold voltage, high breakdown voltage, high-
input impedance, low-input capacitance, and fast
switching speeds are desired.
Package Types
GATE
SOURCE
DRAIN
TO-39
Case: Drain
See Table 2-1 for pin information
2016 Microchip Technology Inc.
DS20005509A-page 1
1 Page 2N6660
THERMAL CHARACTERISTICS
Package
TO-39
ID(1)
continuous
(mA)
410
ID
pulsed
(A)
3.0
Power
Dissipation
@TA = 25°C (W)
6.25
Note 1: ID (continuous) is limited by max rated TJ.
Product Summary
BVDSX/BVDGS
(V)
60
RDS(ON)
(max) (Ω)
3.0
IDR(1)
(mA)
410
IDRM
(A)
3.0
IDSS
(min) (A)
1.5
2.0 PIN DESCRIPTION
The locations of the pins are listed in Package Types
and Packaging Information.
TABLE 2-1: PIN DESCRIPTION
Pin # TO-39
1
2
3
Function
SOURCE
GATE
DRAIN
2016 Microchip Technology Inc.
DS20005509A-page 3
3Pages 2N6660
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
DS20005509A-page 6
2016 Microchip Technology Inc.
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ 2N6660 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2N6660 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
2N6660 | TMOS SWITCHING FET TRANSISTORS | Motorola Inc |
2N6660 | N-Channel 60 V (D-S) MOSFET | Vishay Siliconix |
2N6660 | Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD | New Jersey Semiconductor |