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Datasheet 2SB1261 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SB1261 | PNP Transistor 2SB1261
Transistor(PNP)
1. BASE
1 2. COLLECTOR
3. EMITTER
TO-252-2L
Features
High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emi |  LGE | transistor |
| 2 | 2SB1261 | Silicon PNP transistor 2SB1261
Rev.E May.-2016
DATA SHEET
描述 / Descriptions TO-252 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-252 Plastic Package.
特征 / Features
hFE 线性好，饱和压降低，耗散功率大。 Excellent hFE linearity, low VCE(sat), high PC.
用途 / Applicatio |  BLUE ROCKET ELECTRONICS | transistor |
| 3 | 2SB1261-K | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SB1261-K
DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation-
: PC= 10W(Max)@TC=25℃ ·Complement to Type 2SD1899-K
APPLICATIONS ·Designed for use in audio amplifier and switching,
especially |  Inchange Semiconductor | transistor |
| 4 | 2SB1261-Z | PNP SILICON EPITAXIAL TRANSISTOR MP-3 |  NEC | transistor |
| 5 | 2SB1261-Z | Plastic-Encapsulate Transistors Transys
Electronics
L I M I T E D
TO-252 Plastic-Encapsulate Transistors
2SB1261-Z
FEATURES Power dissipation
TRANSISTOR (PNP) TO-252
1. BASE
PCM:
2
W (Tamb=25℃)
2. COLLECTOR
Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage juncti |  TRANSYS Electronics Limited | transistor |
2SB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SB030070MLJY | 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur  Silan Microelectronics transistor | | |
| 2 | 2SB035030MLJY | 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H Silan Microelectronics transistor | | |
| 3 | 2SB035100ML | 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS 2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High su Silan Microelectronics transistor | | |
| 4 | 2SB0709A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0601A (2SD601A) ■ Features
• High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and th  Panasonic Semiconductor transistor | | |
| 5 | 2SB0710 | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 6 | 2SB0710A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 7 | 2SB0766 | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Panasonic Semiconductor transistor | |
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