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IRG4BC20KDPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRG4BC20KDPBF |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRG4BC20KDPBFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
PD -94907
IRG4BC20KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-220AB package
Lead-Free
C
G
E
n-channel
Benefits
Latest generation 4 IGBTs offer highest power density
controls possible
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces the IRGBC20KD2 and IRGBC20MD2
products
For hints see design tip 97003
motor
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Max.
600
16
9.0
32
32
7.0
32
10
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Units
V
A
µs
V
W
°C
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Min.
Typ.
0.50
2 (0.07)
Max.
2.1
3.5
80
Units
°C/W
g (oz)
1
12/23/03
1 Page 10
8
6 Square wave:
60% of rated
voltage
4
I
2 Ideal diodes
0
0.1
IRG4BC20KDPbF
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 13 W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100 100
TJ = 25 oC
TJ = 150 oC
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
10
TJ = 150 oC
TJ = 25 oC
VCC = 50V
5µs PULSE WIDTH
1
5 10 15 20
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
3Pages IRG4BC20KDPbF
3.0 RG = 5O0hΩm
T J = 150° C
VCC = 480V
VGE = 15V
2.0
1.0
0.0
0 4 8 12 16
I C, Collector-to-emitter Current (A)
20
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
100
VTGJE
= 20V
= 125 oC
10
SAFE OPERATING AREA
1
1 10 100
VCE, Collector-to-Emitter Voltage (V)
1000
Fig. 12 - Turn-Off SOA
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Voltage Drop - VFM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRG4BC20KDPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |