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IRG4BC20KDPBF の電気的特性と機能

IRG4BC20KDPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4BC20KDPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4BC20KDPBF Datasheet, IRG4BC20KDPBF PDF,ピン配置, 機能
PD -94907
IRG4BC20KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220AB package
• Lead-Free
C
G
E
n-channel
Benefits
• Latest generation 4 IGBTs offer highest power density
controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGBC20KD2 and IRGBC20MD2
products
• For hints see design tip 97003
motor
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Max.
600
16
9.0
32
32
7.0
32
10
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.1
3.5
–––
80
–––
Units
°C/W
g (oz)
1
12/23/03

1 Page





IRG4BC20KDPBF pdf, ピン配列
10
8
6 Square wave:
60% of rated
voltage
4
I
2 Ideal diodes
0
0.1
IRG4BC20KDPbF
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 13 W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100 100
TJ = 25 oC
TJ = 150 oC
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
10
TJ = 150 oC
TJ = 25 oC
VCC = 50V
5µs PULSE WIDTH
1
5 10 15 20
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4BC20KDPBF 電子部品, 半導体
IRG4BC20KDPbF
3.0 RG = 5O0hm
T J = 150° C
VCC = 480V
VGE = 15V
2.0
1.0
0.0
0 4 8 12 16
I C, Collector-to-emitter Current (A)
20
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
100
VTGJE
= 20V
= 125 oC
10
SAFE OPERATING AREA
1
1 10 100
VCE, Collector-to-Emitter Voltage (V)
1000
Fig. 12 - Turn-Off SOA
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Voltage Drop - VFM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRG4BC20KDPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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