DataSheet.es    


Datasheet 50N06 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
150N06N-CHANNEL MOSFET

50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25�
CHONGQING PINGYANG
CHONGQING PINGYANG		mosfet
250N06N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 50N06 ·DESCRIPTION ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAM
Inchange Semiconductor
Inchange Semiconductor		mosfet
350N06Power-Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N06 Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS
Tuofeng Semiconductor
Tuofeng Semiconductor		transistor
450N06Low voltage high current power MOS FET

50N06 * '6 72 Available RoHS* COMPLIANT ' * 6 VDS ID VGS PD TJ Tstg EAS 52.4 Ciss Coss Crss VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ 特性参数值(TC=25ºC) 参数说明 漏源反向电压 漏源截止电流 栅源截止电流 通态电阻 栅源极
ETC
ETC		data
550N06N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold volta
Unisonic Technologies
Unisonic Technologies		mosfet


50N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
150N02-09SUB50N02-09

SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 20 15 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested APPLICATIONS D High-
Vishay Siliconix
Vishay Siliconix		data
250N024SUD50N024

SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24C FEATURES ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency AP
Vishay Siliconix
Vishay Siliconix		data
350N02409PU54ASU50N02409PU54A

SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24C FEATURES ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for
Vishay Intertechnology
Vishay Intertechnology		data
450N025-05PSUD50N025-05P

New Product SUD50N025-05P Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 25 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V ID (A)a, e 89 80 Qg (Typ) 30 nC TO-252 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant APPLICATIONS D DC/DC Conversion
Vishay Siliconix
Vishay Siliconix		data
550N03Power Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N03 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) �
Tuofeng
Tuofeng		transistor
650N03N-CHANNEL MOSFET

KIA SEMICONDUCTORS 50 Amps, 30 Volts N-CHANNEL MOSFET 1.Features  Advanced trench process technology  High density cell design for ultra low on-resistance  Fully characterized avalanche voltage and current 2.Applications  VDSS=30V,RDS(on)=6.5mΩ,ID=50A  Vds=30V  RDS(ON)=6.5mΩ(M
KIA
KIA		mosfet
750N035N-Channel Field Effect Transistor

Bay Linear Linear Excellence N-Channel Field Effect Transistor 50N035 Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automoti
Bay Linear
Bay Linear		transistor



Esta página es del resultado de búsqueda del 50N06. Si pulsa el resultado de búsqueda de 50N06 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap