Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N06
Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Product Summary
V DS
R DS(on),max SMDversion
ID
60 V
15 mΩ
50 A
Type
50N06
50N06
2
Package
Marking
1
3
TO-251
50N06
1
23
TO-252
50N06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D TC =25 °C1)
Pulsed drain current
I D,pulse T C=25 °C2)
Avalanche energy, single pulse
E AS I D=50 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=48 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 160A
2) See figure 3
1
Value
50
400
810
6
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
