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PDF D5N50 Data sheet ( Hoja de datos )

Número de pieza D5N50
Descripción 5A N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AOD5N50
500V,5A N-Channel MOSFET
General Description
Product Summary
The AOD5N50 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
600V@150
5A
< 1.6
Top View
TO252
DPAK
Bottom View
D
D
S
G
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy H
ID
IDM
IAR
EAR
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
Maximum
500
±30
5
3.1
17
2.8
118
235
5
104
0.83
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
43
-
1
Maximum
55
0.5
1.2
D
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: June 2010
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D5N50 pdf
AOD5N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
90
60
30
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 12: Power De-rating (Note B)
6
5
4
3
2
1
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
500
400
TJ(Max)=150°C
TA=25°C
300
200
100
0
0.001
0.01
0.1 1
Pulse Width (s)
10
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
100
1000
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.0001
0.0001
Single Pulse
PD
Ton
T
0.001
0.01 0.1 1 10 100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
1000
10000
Rev0: June 2010
www.aosmd.com
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