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HIP6601A の電気的特性と機能

HIP6601AのメーカーはIntersil Corporationです、この部品の機能は「Synchronous Rectified Buck MOSFET Drivers」です。


製品の詳細 ( Datasheet PDF )

部品番号 HIP6601A
部品説明 Synchronous Rectified Buck MOSFET Drivers
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HIP6601A Datasheet, HIP6601A PDF,ピン配置, 機能
RECOMMEONBHD®SIEPOD6L6RE0ET1PEBDL,aPAHtRaCIPOES6DMh6U0eEC3eNBtTT PRODUCT
HIP6601A, HIP6603A, HIP6604
August 2004
FN4884.5
Synchronous Rectified Buck MOSFET
Drivers
The HIP6601A, HIP6603A and HIP6604 are high frequency,
dual MOSFET drivers specifically designed to drive two
power N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with a HIP63xx
or an ISL65xx Multi-Phase Buck PWM controller form a
complete core-voltage regulator solution for advanced
microprocessors.
The HIP6601A drives the lower gate in a synchronous
rectifier to 12V, while the upper gate can be independently
driven over a range from 5V to 12V. The HIP6603A drives
both upper and lower gates over a range of 5V to 12V. This
drive-voltage flexibility provides the advantage of optimizing
applications involving trade-offs between switching losses
and conduction losses. The HIP6604 can be configured as
either a HIP6601A or a HIP6603A.
The output drivers in the HIP6601A, HIP6603A and HIP6604
have the capacity to efficiently switch power MOSFETs at
frequencies up to 2MHz. Each driver is capable of driving a
3000pF load with a 30ns propagation delay and 50ns
transition time. These products implement bootstrapping on
the upper gate with only an external capacitor required. This
reduces implementation complexity and allows the use of
higher performance, cost effective, N-Channel MOSFETs.
Adaptive shoot-through protection is integrated to prevent
both MOSFETs from conducting simultaneously.
Ordering Information
TEMP. RANGE
PART NUMBER (oC) PACKAGE
PKG.
DWG. #
HIP6601ACB
0 to 85
8 Ld SOIC M8.15
HIP6603ACB
0 to 85
8 Ld SOIC M8.15
HIP6601ACB-T 8 Ld SOIC Tape and Reel
HIP6603ACB-T 8 Ld SOIC Tape and Reel
HIP6601ECB
0 to 85
8 Ld EPSOIC M8.15B
HIP6603ECB
0 to 85
8 Ld EPSOIC M8.15B
HIP6601ECB-T 8 Ld EPSOIC Tape and Reel
HIP6603ECB-T
HIP6604CR
HIP6604CR-T
8 Ld EPSOIC Tape and Reel
0 to 85
16 Ld 4x4 QFN L16.4x4
16 Ld 4x4 QFN Tape and Reel
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 8 Lead SOIC and EPSOIC and 16 Lead QFN
Packages
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Output Stage Shutdown
• Supply Under Voltage Protection
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD®
Athlon™ Microprocessors
• High Frequency Low Profile DC-DC Converters
• High Current Low Voltage DC-DC Converters
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Pinouts
HIP6601ACB, HIP6603ACB (SOIC)
HIP6601ECB, HIP6603ECB (EPSOIC)
TOP VIEW
UGATE 1
BOOT 2
PWM 3
GND 4
8 PHASE
7 PVCC
6 VCC
5 LGATE
HIP6604 (QFN)
TOP VIEW
16 15 14 13
NC 1
BOOT 2
PWM 3
GND 4
12 NC
11 PVCC
10 LVCC
9 VCC
5678
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2003, 2004. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.

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HIP6601A pdf, ピン配列
HIP6601A, HIP6603A, HIP6604
Typical Application - 3 Channel Converter Using HIP6301 and HIP6601A Gate Drivers
+5V
BOOT
PVCC
VCC
UGATE
DRIVE PHASE
PWM HIP6601A
LGATE
+12V
PGOOD
VID
+5V
VFB
COMP
VCC
VSEN
PWM1
PWM2
PWM3
MAIN
CONTROL
HIP6301
ISEN1
ISEN2
FS ISEN3
GND
+5V
BOOT
PVCC
VCC
UGATE
PWM DRIVE PHASE
HIP6601A
LGATE
+12V
+5V
BOOT
VCC
PWM
PVCC
UGATE
DRIVE PHASE
HIP6601A
LGATE
+12V
+VCORE
3


3Pages


HIP6601A 電子部品, 半導体
HIP6601A, HIP6603A, HIP6604
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [tPDLUGATE] is encountered before the
upper gate begins to fall [tFUGATE]. Again, the adaptive
shoot-through circuitry determines the lower gate delay time,
tPDHLGATE. The PHASE voltage is monitored and the lower
gate is allowed to rise after PHASE drops below 0.5V. The
lower gate then rises [tRLGATE], turning on the lower
MOSFET.
Three-State PWM Input
A unique feature of the HIP660X drivers is the addition of a
shutdown window to the PWM input. If the PWM signal
enters and remains within the shutdown window for a set
holdoff time, the output drivers are disabled and both
MOSFET gates are pulled and held low. The shutdown state
is removed when the PWM signal moves outside the
shutdown window. Otherwise, the PWM rising and falling
thresholds outlined in the ELECTRICAL SPECIFICATIONS
determine when the lower and upper gates are enabled.
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection
to prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is
accomplished by ensuring the falling gate has turned off one
MOSFET before the other is allowed to rise.
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 2.2V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the PHASE voltage during UGATE turn-off. Once
PHASE has dropped below a threshold of 0.5V, the LGATE
is allowed to rise. PHASE continues to be monitored during
the lower gate rise time. If PHASE has not dropped below
0.5V within 250ns, LGATE is taken high to keep the
bootstrap capacitor charged. If the PHASE voltage exceeds
the 0.5V threshold during this period and remains high for
longer than 2µs, the LGATE transitions low. Both upper and
lower gates are then held low until the next rising edge of the
PWM signal.
Power-On Reset (POR) Function
During initial startup, the VCC voltage rise is monitored and
gate drives are held low until a typical VCC rising threshold
of 9.95V is reached. Once the rising VCC threshold is
exceeded, the PWM input signal takes control of the gate
drives. If VCC drops below a typical VCC falling threshold of
9.2V during operation, then both gate drives are again held
low. This condition persists until the VCC voltage exceeds
the VCC rising threshold.
Internal Bootstrap Device
The HIP6601A, HIP6603A, and HIP6604 drivers all feature
an internal bootstrap device. Simply adding an external
capacitor across the BOOT and PHASE pins completes the
bootstrap circuit.
The bootstrap capacitor must have a maximum voltage
rating above VCC + 5V. The bootstrap capacitor can be
chosen from the following equation:
CB
O
OT
---Q----G-----A----T---E----
VBOOT
Where QGATE is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The VBOOT term is
defined as the allowable droop in the rail of the upper drive.
As an example, suppose a HUF76139 is chosen as the
upper MOSFET. The gate charge, QGATE, from the data
sheet is 65nC for a 10V upper gate drive. We will assume a
200mV droop in drive voltage over the PWM cycle. We find
that a bootstrap capacitance of at least 0.325µF is required.
The next larger standard value capacitance is 0.33µF.
In applications which require down conversion from +12V or
higher and PVCC is connected to a +12V source, a boot
resistor in series with the boot capacitor is required. The
increased power density of these designs tend to lead to
increased ringing on the BOOT and PHASE nodes, due to
faster switching of larger currents across given circuit
parasitic elements. The addition of the boot resistor allows
for tuning of the circuit until the peak ringing on BOOT is
below 29V from BOOT to GND and 17V from BOOT to VCC.
A boot resistor value of 5typically meets this criteria.
In some applications, a well tuned boot resistor reduces the
ringing on the BOOT pin, but the PHASE to GND peak
ringing exceeds 17V. A gate resistor placed in the UGATE
trace between the controller and upper MOSGET gate is
recommended to reduce the ringing on the PHASE node by
slowing down the upper MOSFET turn-on. A gate resistor
value between 2to 10typically reduces the PHASE to
GND peak ringing below 17V.
Gate Drive Voltage Versatility
The HIP6601A and HIP6603A provide the user total
flexibility in choosing the gate drive voltage. The HIP6601A
lower gate drive is fixed to VCC [+12V], but the upper drive
rail can range from 12V down to 5V depending on what
voltage is applied to PVCC. The HIP6603A ties the upper
and lower drive rails together. Simply applying a voltage
from 5V up to 12V on PVCC will set both driver rail voltages.
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for
a desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level
will push the IC beyond the maximum recommended
operating junction temperature of 125oC. The maximum
allowable IC power dissipation for the SO8 package is
approximately 800mW. When designing the driver into an
application, it is recommended that the following calculation
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部品番号部品説明メーカ
HIP6601

Synchronous-Rectified Buck MOSFET Drivers

Intersil Corporation
Intersil Corporation
HIP6601A

Synchronous Rectified Buck MOSFET Drivers

Intersil Corporation
Intersil Corporation
HIP6601B

(HIP6601B / HIP6603B / HIP6604B) Synchronous Rectified Buck MOSFET Drivers

Intersil Corporation
Intersil Corporation
HIP6601CB

Synchronous-Rectified Buck MOSFET Drivers

Intersil Corporation
Intersil Corporation


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