Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TO-92 Plastic-Encapsulate Transistors
S8550 TRANSISTOR (PNP)
FEATURE
Power dissipation
PCM: 0.625 W (Tamb=25℃)
Collector current
ICM: -0.5
Collector-base voltage
A
V(BR)CBO:
-40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Ic= -100µA , IE=0
Ic= -0.1 mA, IB=0
IE= -100µA, IC=0
VCB= -40V, IE=0
VCE= -20V, IB=0
VEB= - 3V, IC=0
VCE= -1V, IC= -50mA
VCE= -1V, IC= -500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
-40
-25
-5
85
50
V
V
V
-0.1 µA
-0.1 µA
-0.1 µA
300
-0.6 V
-1.2 V
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
Range
fT
B
85-160
VCE=- 6 V, IC=-20mA
f =30MHz
150
C
120-200
MHz
D
160-300
