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8820 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 8820
部品説明 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
メーカ Tuofeng Semiconductor
ロゴ Tuofeng Semiconductor ロゴ 



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8820 Datasheet, 8820 PDF,ピン配置, 機能
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
8820
8820
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The 8820 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected. This
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product 8820 is Pb-free
(meets ROHS & Sony 259 specifications). 8820 is
a Green Product ordering option. 8820 is
electrically identical.
Features
VDS (V) = 20V
ID = 6A (VGS = 10V)
RDS(ON) < 28m(VGS = 4.5V)
RDS(ON) < 38m(VGS = 2.5V)
D1/D2
S1
S1
G1
TSSOP-8
Top View
18
27
36
45
D1/D2
S2
S2
G2
D1
G1 G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
TA=25°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±10
7
25
1.5
0.96
-55 to 150
D2
S2
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W

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