DataSheet.jp

8810 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 8810
部品説明 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
メーカ Tuofeng Semiconductor
ロゴ Tuofeng Semiconductor ロゴ 



Total 4 pages
		

No Preview Available !

8810 Datasheet, 8810 PDF,ピン配置, 機能
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
8810
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The 8810 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
Standard Product 8810 is Pb-free (meets ROHS & Sony 259
specifications). 8810 is electrically identical.
Features
VDS (V) = 20V
ID = 6A (V GS = 4.5V)
RDS(ON) < 22m(VGS = 4.5V)
RDS(ON) < 30m(VGS = 2.5V)
ESD Rating: 2000V HBM
D1/D2
S1
S1
G1
TSSOP-8
Top View
18
27
36
45
D1/D2
S2
S2
G2
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
TA=25°C
ID
Pulsed Drain Current B
IDM
Power Dissipation A TA=25°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±8
6
30
1.5
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W

1 Page





ページ 合計 : 4 ページ
PDF
ダウンロード
[ 8810.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
8810

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Tuofeng Semiconductor
Tuofeng Semiconductor
8812FP

ST8812FP

STMicroelectronics
STMicroelectronics
8813490000

IE-DPC

Weidmuller
Weidmuller
8816

T-1 Subminiature Lamps

Gilway Technical Lamp
Gilway Technical Lamp

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap