|
|
4953BのメーカーはTuofeng Semiconductorです、この部品の機能は「Dual 20V P-Channel PowerTrench MOSFET」です。 |
部品番号 | 4953B |
| |
部品説明 | Dual 20V P-Channel PowerTrench MOSFET | ||
メーカ | Tuofeng Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと4953Bダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3tdB
4953B
Dual 20V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings .
Applications
• Power management
• Load switch
• Battery protection
Features
• –3.5 A, –20 V
RDS(ON) = 70 mΩ @ VGS = –4.5V
RDS(ON) = 135mΩ @ VGS = –2.5 V
• Low gate charge (6nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD1DD22D2
DD1
SO-8
Pin 1 SO-8
S2GG2
SS1GS1 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID Drain Current – Continuous
(Note 1a)
PD
TJ, TSTG
Power Dissipation for Dual Operation
Operating and Storage Junction Temperature Range
5
6 Q1
7
Q2
8
4
3
2
1
Ratings
–20
±10
–3.5
1.5
–55 to +175
Units
V
V
A
W
°C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
4953B
4953B
13’’
78
40
Tape width
12mm
°C/W
°C/W
Quantity
2500 units
1 Page Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4953B
Typical Characteristics
30
VGS = -10V
-6.0V
-5.0V
V
-4.5V
20 V
-4.0V
10
-3.5V
-3.0V
0
0 12 34 5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
6
Figure 1. On-Region Characteristics.
1.6
ID = -5A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
15
VDS = -5V
12
9
6
T A = -55oC
25oC
125oC
3
0
1 1.5 2 2.5 3 3.5 4 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.8
VGS=-4.0V
1.6
-4.0V
1.4 -5.0V
-6.0V
1.2
-7.0V
-8.0V
-10V
1
0.8
0
6 12 18 24
-ID, DRAIN CURRENT (A)
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.25
0.2
ID = -2.5A
0.15
0.1
0.05
T A = 25oC
TA = 125oC
0
2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
10
1
0.1
0.01
VGS =0V
TA = 125oC
25oC
-55 oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ 4953B データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
4953 | Dual 30V P-Channel PowerTrench MOSFET | Tuofeng Semiconductor |
4953A | Dual 30V P-Channel PowerTrench MOSFET | Tuofeng Semiconductor |
4953B | Dual 20V P-Channel PowerTrench MOSFET | Tuofeng Semiconductor |
4953GM | AP4953GM | Advanced Power Electronics |