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4920 の電気的特性と機能

4920のメーカーはTuofeng Semiconductorです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 4920
部品説明 N-Channel Enhancement Mode Field Effect Transistor
メーカ Tuofeng Semiconductor
ロゴ Tuofeng Semiconductor ロゴ 




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4920 Datasheet, 4920 PDF,ピン配置, 機能
Shenzhen Tuofeng Semiconductor Technology co., LTD
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
4920
Simple Drive Requirement
Low On-resistance
Fast Switching
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
The TUOFENG MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
BVDSS
RDS(ON)
ID
30V
25mΩ
7A
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
IDM
PD@TA=25
TSTG
TJ
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
± 20
7
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Max.
Value
62.5
Unit
/W

1 Page





4920 pdf, ピン配列
Shenzhen Tuofeng Semiconductor Technology co., LTD
4920
20
10V
8.0V
6.0V
5.0V
15 V GS = 4 .0V
10
5
T C =25 oC
0
01234567
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20 10V
8.0V
6.0V
5.0V
15 V GS = 4 .0V
10
5
T C =150 oC
0
01234567
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
50
I D=7A
T C =25
40
30
20
10
3 4 5 6 7 8 9 10 11
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.8
I D=7A
1.6 V GS =10V
1.4
1.2
1.0
0.8
0.6
-50
0 50 100
T j , Junction Temperature ( oC)
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature


3Pages


4920 電子部品, 半導体
Shenzhen Tuofeng Semiconductor Technology co., LTD
4920
RD
RG
+
10V
-
G
D
S
VDS
VGS
TO THE
OSCILLOSCOPE
0.6x RATED VDS
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VDS
D
G
TO THE
OSCILLOSCOPE
0.6 x RATED VDS
S VGS
+
1~ 3 mA
-
II
GD
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
4920

N-Channel Enhancement Mode Field Effect Transistor

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