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4611 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 4611
部品説明 60V Dual P + N-Channel MOSFET
メーカ Tuofeng Semiconductor
ロゴ Tuofeng Semiconductor ロゴ 

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4611 Datasheet, 4611 PDF,ピン配置, 機能
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4611
60V Dual P + N-Channel MOSFET
Product Summary
N-Channel
VDS (V) = 60V
ID = 6.3A (VGS=10V)
RDS(ON)
< 38m(VGS=10V)
< 45m(VGS=4.5V)
100% UIS Tested
100% Rg Tested
P-Channel
-60V
-4.9A
< 65m(VGS = -10V)
< 78m(VGS = -4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D2 D1
S2 D2
G2 D2
S1 D1
G1 D1 G2
G1
S2 S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain
Current A
TA=25°C
ID
6.3
Pulsed Drain Current B
IDM 40
Power Dissipation
TA=25°C
Junction and Storage Temperature Range
PD
TJ, TSTG
2
-55 to 150
Max p-channel
-60
±20
-4.9
-30
2
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
60
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W

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