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PDF 4606 Data sheet ( Hoja de datos )
| Número de pieza | 4606 | |
| Descripción | Complementary High Density Trench MOSFET | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 4606 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Shenzhen Tuofeng Semiconductor Technology co., LTD
4606
Complementary High Density Trench MOSFET
PRODUCT SUMMARY (N-Channel)
VDSS ID
RDS(on) (m-ohm) Max
30V 6.9A
28 @ VGS = 10 V,ID=6.9A
42 @ VGS = 4.5V,ID=5.0A
PRODUCT SUMMARY (P-Channel)
VDSS
ID
RDS(on) (m-ohm) Max
-30V -6.0 A 50 @ VGS = -10V,ID=- 6.0A
80@VGS = -4.5V, ID=- 5.0A
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS
VGS
ID
IDM
Is
PD
Tj, Tstg
RθJA
Drain-Source Voltage
Gate-Source Voltage
Drain Currenta
Drain Currentb (Pulsed) *1
Drain-Source Diode Forward Current a
Total Power Dissipationa @TA=25oC
Total Power Dissipationa @TA=75oC
Operating Junction and Storage Temperature Rangea
Thermal Resistance Junction to Ambienta
a: Surface Mounted on FR4 Board , t ≤ 5sec .
b: Pulse width limited by maximum junction temperature.
N-Channel P-Channel
30 -30
±20 ±20
6.9 - 6.0
28 -26
2.5 -2.3
2.0 2.0
1.2 1.2
-55 to +150 -55 to +150
63.2 63.2
Units
V
V
A
A
A
W
°C
°C/W
1
1 page  
Shenzhen Tuofeng Semiconductor Technology co., LTD
4606
Characteristics Curve(N-Channel)
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 4606.PDF ] | |
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