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4435のメーカーはTuofeng Semiconductorです、この部品の機能は「P-Channel Enhancement Mode Field Effect Transistor」です。 |
部品番号 | 4435 |
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部品説明 | P-Channel Enhancement Mode Field Effect Transistor | ||
メーカ | Tuofeng Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと4435ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
P-Channel 30-V (D-S) MOSFET
4435
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.020 @ VGS = −10 V
−30
0.030 @ VGS = −4.5 V
ID (A)
−8.0
−5.0
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
D Lead (Pb)-Free Version is RoHS
Compliant
APPLICATIONS
D Load Switches
D Battery Switch
Available
SO-8
S1
S2
S3
G4
Top View
Ordering Information: 4435
8D
7D
6D
5D
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS −30
VGS "20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
−8.0
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
IDM
IS
PD
TJ, Tstg
−50
−2.1
−1.25
2.5 1.5
1.6 0.9
−55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
1
Symbol
RthJA
RthJF
Typical
40
70
18
Maximum
50
85
22
Unit
V
A
W
_C
Unit
_C/W
1 Page Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4435
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.040
On-Resistance vs. Drain Current
2400
Capacitance
0.035
0.030
0.025
VGS = 4.5 V
1800
Ciss
0.020
0.015
VGS = 10 V
1200
0.010
0.005
0.000
0
10 20 30 40 50
600
Crss
0
05
Coss
10 15 20 25 30
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
Gate Charge
10
VDS = 15 V
ID = 9.1 A
8
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
ID = 9.1 A
1.4
6 1.2
4 1.0
2 0.8
0
0 10 20 30 40
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
TJ = 150_C
10
TJ = 25_C
0.6
−50 −25
0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
ID = 9.1 A
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD − Source-to-Drain Voltage (V)
0.00
0
2468
VGS − Gate-to-Source Voltage (V)
10
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ 4435 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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