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Datasheet CFY77 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CFY77 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) AlGaAs / InGaAs HEMT
CFY 77
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Datasheet
Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters
ESD:
Electrostatic discharge sens |  Siemens Semiconductor Group | amplifier |
| 2 | CFY77-08 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Datasheet
Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters
ESD:
Electrostatic discharge sens | Siemens Semiconductor Group | amplifier |
| 3 | CFY77-10 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Datasheet
Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters
ESD:
Electrostatic discharge sens | Siemens Semiconductor Group | amplifier |
CFY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q Siemens Semiconductor Group amplifier | | |
| 2 | CFY25 | HiRel X-Band GaAs Low Noise / General Purpose MESFET Infineon Technologies AG data | | |
| 3 | CFY25-17 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q Siemens Semiconductor Group amplifier | | |
| 4 | CFY25-20 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q Siemens Semiconductor Group amplifier | | |
| 5 | CFY25-20 | HiRel X-Band GaAs Low Noise / General Purpose MESFET Infineon Technologies AG data | | |
| 6 | CFY25-20P | HiRel X-Band GaAs Low Noise / General Purpose MESFET Infineon Technologies AG data | | |
| 7 | CFY25-23 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q Siemens Semiconductor Group amplifier | |
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