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PDF K3936 Data sheet ( Hoja de datos )
| Número de pieza | K3936 | |
| Descripción | MOSFET ( Transistor ) - 2SK3936 | |
| Fabricantes | Toshiba | |
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2SK3936
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI)
2SK3936
Switching Regulator Applications
Unit: mm
• Small gate charge: Qg = 60 nC (typ.)
• Fast reverse recovery time: trr = 380 ns (typ.)
• Low drain-source ON-resistance: RDS (ON) = 0.2 Ω (typ.)
• High forward transfer admittance: |Yfs| = 16.5 S (typ.)
• Low leakage current: IDSS = 500 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
500
±30
23
92
150
759
23
15
150
-55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.833
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.44 mH, IAR = 23 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
1 2009-09-29
1 page  
2SK3936
www.DataSheet4U.com
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
10μ
100μ
SINGLE PULSE
1m 10m
PDM
t
T
100m
Duty = t/T
Rth (ch-c) = 0.833°C/W
1 10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
1000
100 ID max (PULSE) *
ID max (CONTINUOUS)
1 ms *
10
100 μs *
DC OPERATION
1 Tc=25℃
0.1 *: SINGLE NONREPETITIVE
PULSE
Tc = 25°C
Curves must be derated linearly
with increase in temperature
0.01
1 10
VDSS max
100
1000
DRAIN−SOURCE VOLTAGE VDS (V)
EAS – Tch
1000
800
600
400
200
0
25 50 75 100 125 150
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 2.44 mH
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-09-29
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3936.PDF ] | |
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