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PDF SS8550LT1 Data sheet ( Hoja de datos )
| Número de pieza | SS8550LT1 | |
| Descripción | PNP Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SOT-23 Plastic-Encapsulate Transistors
SS8550LT1 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: -1.5 A
Collector-base voltage
V(BR)CBO:
-40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃to +150℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
Range
L
120-200
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic= -100µA, IE=0
Ic= -0.1mA, IB=0
IE= -100µA, IC=0
VCB= -40V, IE=0
VCE= -20V, IB=0
VEB= -5V, IC=0
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
IC=-800mA, IB= -80mA
IC=-800mA, IB= -80mA
VCE= -10V, IC= -50mA
f=30MHz
MIN
-40
-25
-5
120
40
100
H
200-350
MAX UNIT
V
V
V
-0.1 µA
-0.1 µA
-0.1 µA
350
-0.5 V
-1.2 V
MHz
DEVICE MARKING
SS8550LT1=Y2
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| PDF Descargar | [ Datasheet SS8550LT1.PDF ] | |
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