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PDF P60N03LDG Data sheet ( Hoja de datos )
| Número de pieza | P60N03LDG | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P60N03LDG
TO-252 (DPAK)
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25 12.8m
ID
60A
D
G
1. GATE
2. DRAIN
3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
IAR
EAS
EAR
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1
TYPICAL
0.7
LIMITS
±20
60
36
140
20
140
5.6
60
38
-55 to 150
275
UNITS
V
A
mJ
W
°C
MAXIMUM
3
70
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
LIMITS
UNIT
MIN TYP MAX
25
0.8 1.2
2.5
V
±250 nA
25
µA
250
60 A
1 Sep-02-2004
1 page  
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P60N03LDG
TO-252 (DPAK)
Lead-Free
TO-252 (DPAK) MECHANICAL DATA
Dimension
A
B
C
D
E
F
G
Min.
9.35
2.2
0.45
0.89
0.45
0.03
5.2
mm
Typ.
Max.
10.4
2.4
0.6
1.5
0.69
0.23
6.2
Dimension
H
I
J
K
L
M
N
Min.
0.89
6.35
5.2
0.6
0.5
3.96
mm
Typ.
4.57
Max.
2.03
6.80
5.5
1
0.9
5.18
A
HG
K
5 Sep-02-2004
5 Page | ||
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