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IRFB20N50K の電気的特性と機能

IRFB20N50KのメーカーはVishayです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB20N50K
部品説明 Power MOSFET ( Transistor )
メーカ Vishay
ロゴ Vishay ロゴ 




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IRFB20N50K Datasheet, IRFB20N50K PDF,ピン配置, 機能
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
110
33
54
Single
0.21
TO-220
D
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Low RDS(on)
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
TO-220
IRFB20N50KPbF
SiHFB20N50K-E3
IRFB20N50K
SiHFB20N50K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 1.6 mH, Rg = 25 Ω, IAS = 20 A.
c. ISD 20 A, dI/dt 350 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91101
S09-2236-Rev. D, 05-Apr-10
LIMIT
500
± 30
20
12
80
2.2
330
20
28
280
10
- 55 to + 150
300d
10
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
N
www.vishay.com
1

1 Page





IRFB20N50K pdf, ピン配列
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
VGS
Top 15 V
12 V
10 V
8.0 V
10 7.0 V
6.0 V
5.5 V
Bottom 5.0 V
100.0
10.0
1 1.0
TJ = 150 °C
TJ = 25 °C
0.1
5.0V
0.01
0.1
20 µs Pulse Width
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100
0.1
VDS = 50 V
20 ms Pulse width
0.0
5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100 VGS
Top 15 V
12 V
10 V
8.0 V
10 7.0 V
6.0 V
5.5 V
Bottom 5.0 V
1
5.0V
0.1
0.01
0.1
20 µs Pulse Width
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
100
3.5
ID = 20 A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
V GS = 10 V
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91101
S09-2236-Rev. D, 05-Apr-10
www.vishay.com
3


3Pages


IRFB20N50K 電子部品, 半導体
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
600
ID
Top 9.4 A
17 A
500
Bottom
20A
400
300
200
100
0
25 50 75 100 125 150
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
VGS
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91101
S09-2236-Rev. D, 05-Apr-10

6 Page



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共有リンク

Link :


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