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PDF MIXA81WB1200TEH Data sheet ( Hoja de datos )
| Número de pieza | MIXA81WB1200TEH | |
| Descripción | XPT IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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XPT IGBT Module
MIXA81WB1200TEH
tentative
3~
Rectifier
Brake
Chopper
3~
Inverter
VRRM =
I DAV =
I FSM =
1600 V VCES = 1200 V VCES = 1200 V
290 A IC25 = 90 A IC25 = 120 A
1200 A V =CE(sat) 1.8 V V =CE(sat) 1.8 V
6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC
Part number
MIXA81WB1200TEH
30/31/32 26/27
1/2 3/4 5/6
23
7
28/29
22
10
8/9
20
33/34/35 24/25
21
13
11/12
18
Backside: isolated
17
14/15
16
19
Features / Advantages:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
Package: E3-Pack
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719
1 page  
MIXA81WB1200TEH
Package E3-Pack
Symbol Definition
I RMS
Tstg
T VJ
Weight
RMS current
storage temperature
virtual junction temperature
MD mounting torque
Conditions
per terminal
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
d Spp/App
d Spb/Apb
Rpin-chip
creepage distance on surface | striking distance through air
resistance pin to chip
terminal to terminal
terminal to backside
tentative
Ratings
min. typ. max.
300
-40 125
-40 150
270
36
Unit
A
°C
°C
g
Nm
3600
3000
6.0
12.0
5
V
V
mm
mm
mΩ
2D Data Matrix
XXX XX-XXXXX YYWWx
Logo UL Part number Date Code Location
Part number
M = Module
I = IGBT
X = XPT IGBT
A = Gen 1 / std
81 = Current Rating [A]
WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit
1200 = Reverse Voltage [V]
T = Thermistor \ Temperature sensor
EH = E3-Pack
Ordering
Standard
Part Number
MIXA81WB1200TEH
Marking on Product
MIXA81WB1200TEH
Delivery Mode
Box
Quantity Code No.
5 512760
Temperature Sensor NTC
Symbol Definition
R25
B 25/50
resistance
temperature coefficient
Conditions
TVJ = 25°
min.
4.75
typ. max.
5 5.25
3375
Unit
kΩ
K
Equivalent Circuits for Simulation
I V0
R0
V 0 max
R0 max
threshold voltage
slope resistance *
Rectifier
0.85
2.7
Brake
IGBT
1.1
25
* on die level
Brake
Diode
1.2
27
Inverter
IGBT
1.1
17.9
T VJ = 150°C
Inverter
Diode
1.35 V
8.5 mΩ
105
104
R
[]
103
102
0
25 50 75 100 125 150
TC [°C]
Typ. NTC resistance vs. temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719
5 Page 
Inverter Diode
200
150
IF
100
[A]
50
TVJ = 125°C
TVJ = 25°C
24
20
Qrr 16
[μC] 12
8
TVJ = 125°C
VR = 600 V
200 A
100 A
50 A
MIXA81WB1200TEH
tentative
160
140
120
IRM
100
[A]
80
TVJ = 125°C
VR = 600 V
60
200 A
100 A
50 A
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF [V]
Fig. 1 Typ. Forward current
IF versus VF
4
1200 1400 1600 1800 2000
diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus di/dt
700
600
500
trr 400
[ns] 300
200
TVJ = 125°C
VR = 600 V
200 A
100 A
50 A
100
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
0
1200 1400 1600 1800 2000
diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus di/dt
40
1200 1400 1600 1800 2000
diF /dt [A/μs]
Fig.3 Typ. peak reverse current
IRM versus di/dt
8
TVJ = 125°C
VR = 600 V
6
200 A
Erec
4
[mJ]
100 A
50 A
2
0
1200 1400 1600 1800 2000
diF /dt [A/μs]
Fig. 6 Typ. recovery energy
Erec versus di/dt
1
ZthJC
0.1
[K/W]
0.01
0.001
0.01
0.1
tp [s]
Fig. 7 Typ. transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
1 10
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MIXA81WB1200TEH.PDF ] | |
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