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MIXA80W1200TED の電気的特性と機能

MIXA80W1200TEDのメーカーはIXYSです、この部品の機能は「XPT IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 MIXA80W1200TED
部品説明 XPT IGBT
メーカ IXYS
ロゴ IXYS ロゴ 




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MIXA80W1200TED Datasheet, MIXA80W1200TED PDF,ピン配置, 機能
Six-Pack
XPT IGBT
Part name (Marking on product)
MIXA80W1200TED
MIXA80W1200TED
VCES = 1200 V
IC25 = 120 A
VCE(sat) = 1.8 V
25, 26
17
NTC
1
2
18
3
4
27, 28
59
6 10
7 11
8 12
15, 16
23, 24
21, 22
19, 20
13, 14
E72873
Pin configuration see outlines.
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E2-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100827d
1-7

1 Page





MIXA80W1200TED pdf, ピン配列
Temperature Sensor NTC
Symbol
R25
B25/50
Definitions
resistance
Conditions
Module
Symbol
TVJ
TVJM
Tstg
VISOL
CTI
Md
dS
dA
Rpin-chip
RthCH
Weight
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
creep distance on surface
strike distance through air
resistance pin to chip
thermal resistance case to heatsink
Conditions
IISOL < 1 mA; 50/60 Hz
with heatsink compound
Equivalent Circuits for Simulation
I
V0
Symbol
V0
R0
V0
R0
R0
Definitions
IGBT
free wheeling diode
Conditions
T1 - T6
D1 - D6
MIXA80W1200TED
TC = 25°C
min.
4.75
Ratings
typ. max.
5.0 5.25
3375
Unit
kW
K
min.
-40
-40
3
6
6
Ratings
typ. max.
125
150
125
3000
200
6
2.5
0.02
180
Unit
°C
°C
°C
V~
Nm
mm
mm
mW
K/W
g
TVJ = 150°C
TVJ = 150°C
min.
Ratings
typ. max.
1.1
17.9
1.09
9.1
TC = 25°C unless otherwise stated
Unit
V
mW
V
mW
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100827d
3-7


3Pages


MIXA80W1200TED 電子部品, 半導体
MIXA80W1200TED
Inverter D1 - D6
200
150
IF
100
[A]
50
TVJ = 125°C
TVJ = 25°C
24
20
Qrr 16
[µC] 12
8
TVJ = 125°C
VR = 600 V
200 A
100 A
50 A
0
0.0 0.5 1.0 1.5 2.0 2.5
VF [V]
Fig. 7 Typ. Forward current versus VF
3.0
160
140
TVJ = 125°C
VR = 600 V
120
IRR
100
[A]
80
200 A
100 A
50 A
60
40
1000 1200 1400 1600 1800 2000 2200
diF /dt [A/µs]
Fig. 9 Typ. peak reverse current IRM vs. di/dt
8
TVJ = 125°C
VR = 600 V
6
200 A
Erec
[mJ]
4
100 A
50 A
2
0
1000 1200 1400 1600 1800 2000 2200
diF /dt [A/µs]
Fig. 11 Typ. recovery energy Erec versus di/dt
4
1000 1200 1400 1600 1800 2000 2200
diF /dt [A/µs]
Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt
700
600
500
trr 400
[ns] 300
200
100
TVJ = 125°C
VR = 600 V
200 A
100 A
50 A
0
1000 1200 1400 1600 1800 2000
diF /dt [A/µs]
Fig. 10 Typ. recovery time trr versus di/dt
2200
1
Diode
IGBT
ZthJC 0.1
IGBT
FRD
[K/W]
Ri ti Ri ti
1 0.072 0.002 0.092 0.002
2 0.037 0.03 0.067 0.03
3 0.156 0.03 0.155 0.03
0.01
0.001
4 0.055 0.08 0.086 0.08
0.01
0.1
1
10
tp [s]
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100827d
6-7

6 Page



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共有リンク

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部品番号部品説明メーカ
MIXA80W1200TED

XPT IGBT

IXYS
IXYS
MIXA80W1200TEH

XPT IGBT

IXYS
IXYS


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