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PDF MIXA60HU1200VA Data sheet ( Hoja de datos )
| Número de pieza | MIXA60HU1200VA | |
| Descripción | XPT IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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XPT IGBT Module
H~ Bridge, Buck / Boost - Combination
Part number
MIXA60HU1200VA
MIXA60HU1200VA
VCES =
I C25 =
V =CE(sat)
preliminary
1200 V
85 A
1,8 V
6 10
2
1 83
5
4
7
9
Features / Advantages:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
● Switched-mode power supplies
● Switched reluctance motor drive
Backside: isolated
Package: V1-A-Pack
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20151102b
1 page  
IGBT
100
80
IC 60
[A] 40
TVJ = 125°C
25°C
100
VGE = 15 V
17 V
80 19 V
IC 60
[A] 40
13 V
11 V
9V
20
0
0123
VCE [V]
Fig. 1 Typ. output characteristics
20
TVJ = 125°C
0
01234
VCE [V]
Fig. 2 Typ. output characteristics
MIXA60HU1200VA
preliminary
100
80
IC 60
[A] 40
TVJ = 125°C
20
TVJ = 25°C
0
5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 3 Typ. transfer characteristics
20
IC = 50 A
VCE = 600 V
15
VGE
10
[V]
5
10
RG = 15 Ohm
VCE = 600 V
8 VGE = ±15 V
TVJ = 125°C
E6
[mJ] 4
2
Eon
Eoff
0
0 50 100 150 200
QG [nC]
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
1
0
0 20 40 60 80 100 120
IC [A]
Fig. 5 Typ. recovery time
trr versus -diF /dt
6.0
5.5 Eoff
E
5.0
[mJ]
4.5 Eon
IC = 50 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
4.0
12 16 20 24 28 32
RG [Ohm]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF/dt
ZthJC
0.1
[K/W]
0.01
0.001
0.01
0.1
t [s]
1
Fig. 7 Transient thermal impedance junction to case
10
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20151102b
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MIXA60HU1200VA.PDF ] | |
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