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MIXA20WB1200TML の電気的特性と機能

MIXA20WB1200TMLのメーカーはIXYSです、この部品の機能は「Converter - Brake - Inverter Module」です。


製品の詳細 ( Datasheet PDF )

部品番号 MIXA20WB1200TML
部品説明 Converter - Brake - Inverter Module
メーカ IXYS
ロゴ IXYS ロゴ 




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MIXA20WB1200TML Datasheet, MIXA20WB1200TML PDF,ピン配置, 機能
Converter - Brake - Inverter
Module
XPT IGBT
Part name (Marking on product)
MIXA20WB1200TML
MIXA20WB1200TML
Three Phase
Rectifier
Brake Three Phase
Chopper
Inverter
VRRM = 1600 V VCES = 1200 V VCES = 1200 V
IDAVM25 = 150 A IC25 = 17 A IC25 = 28 A
IFSM = 320 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V
E72873
Pin configuration see outlines.
Features:
• High level of integration - only one
power semiconductor module required
for the whole drive
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• Temperature sense included
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Pumps, Fans
• Washing machines
• Air-conditioning system
• Inverter and power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Package:
• DCB based "E1-Pack"
• Assembly height is 17 mm
• Insulated base plate
• UL registered E72873
20101103c
1-8

1 Page





MIXA20WB1200TML pdf, ピン配列
MIXA20WB1200TML
Brake T7
Symbol
VCES
VGES
VGEM
IC25
IC80
Ptot
VCE(sat)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
IGES
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
RBSOA
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
ISC
(SCSOA)
RthJC
RthCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Brake Chopper D7
Symbol
VRRM
IF25
IF80
VF
Definitions
max. repetitive reverse voltage
forward current
forward voltage
IR reverse current
Qrr
IRM
trr
Erec
RthJC
RthCH
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
transient
TVJ = 25°C
IC = 9 A; VGE = 15 V
IC = 0.3 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VGE = ±20 V
VCE = 600 V; VGE = 15 V; IC = 10 A
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
inductive load
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 100 W
TVJ = 125°C
VGE = ±15 V; RG = 100 W; VCEK = 1200 V
TVJ = 125°C
VCE = 900 V; VGE = ±15 V;
TVJ = 125°C
RG = 100 W; tp = 10 µs; non-repetitive
(per IGBT)
min.
5.5
Ratings
typ. max.
1200
±20
±30
17
12
63
1.8 2.1
2.1
6.0 6.5
0.01 0.1
0.1
500
27
70
40
250
100
1.1
1.1
30
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
nC
ns
ns
ns
ns
mJ
mJ
A
40 A
2.0 K/W
0.7 K/W
Conditions
IF = 20 A; VGE = 0 V
VR = VRRM
VR = 600 V
diF /dt = 400 A/µs
IF = 20 A; VGE = 0 V
(per diode)
TVJ = 150°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
min.
Ratings
typ. max.
1200
33
22
1.95 2.2
1.95
0.01 0.1
0.1
3
20
350
0.7
1.5
0.5
Unit
V
A
A
V
V
mA
mA
µC
A
ns
mJ
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101103c
3-8


3Pages


MIXA20WB1200TML 電子部品, 半導体
MIXA20WB1200TML
IGBT T1 - T6
30
VGE = 15 V
25
20
IC 15
[A]
10
TVJ = 25°C
TVJ = 125°C
5
0
012
VCE [V]
Fig. 1 Typ. output characteristics
3
30
25
20
IC
15
[A]
10
5 TVJ = 125°C
TVJ = 25°C
0
5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 3 Typ. tranfer characteristics
4
RG = 56
VCE = 600 V
3
VGE = ±15 V
TVJ = 125°C
Eon
Eoff
E2
[mJ]
1
0
0 5 10 15 20 25 30 35
IC [A]
Fig. 5 Typ. switching energy vs. collector current
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
30
VGE = 15 V
25
17 V
19 V
20
IC 15
[A]
10
TVJ = 125°C
13 V
11 V
9V
5
0
01234
VCE [V]
Fig. 2 Typ. output characteristics
20
IC = 15 A
VCE = 600 V
15
5
VGE 10
[V]
5
0
0 10 20 30 40
QG [nC]
Fig. 4 Typ. turn-on gate charge
50
2.8
IC = 15 A
VCE = 600 V
2.4
VGE = ±15 V
TVJ = 125°C
E
2.0
[mJ]
1.6
Eoff
Eon
60
1.2
40 60 80 100 120 140 160
RG []
Fig. 6 Typ. switching energy vs. gate resistance
20101103c
6-8

6 Page



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部品番号部品説明メーカ
MIXA20WB1200TMI

XPT IGBT

IXYS
IXYS
MIXA20WB1200TML

Converter - Brake - Inverter Module

IXYS
IXYS


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