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PDF MIXA20WB1200TMI Data sheet ( Hoja de datos )
| Número de pieza | MIXA20WB1200TMI | |
| Descripción | XPT IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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XPT IGBT Module
MIXA20WB1200TMI
tentative
3~
Rectifier
Brake
Chopper
3~
Inverter
VRRM =
I DAV =
I FSM =
1600 V VCES = 1200 V VCES = 1200 V
70 A IC25 = 28 A IC25 = 28 A
270 A V =CE(sat) 1.8 V V =CE(sat) 1.8 V
6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC
Part number
MIXA20WB1200TMI
P P1
T1 G1 G3 G5
L1
L2
BU
V
W
L3
T2
GB G2
G4 G6
Backside: isolated
N NB EU
EV EW
Features / Advantages:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
Package: MiniPack2B
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
1 page  
MIXA20WB1200TMI
tentative
Package MiniPack2B
Ratings
Symbol
I RMS
TVJ
T op
Tstg
Weight
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Conditions
per terminal
min. typ. max.
-40 150
-40 125
-40 125
39
M D mounting torque
2 2.2
d Spp/App
d Spb/Apb
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
6.3 5.0
11.5 10.0
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
3000
2500
Rpin-chip
resistance pin to chip
V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF
6
Tvjm max. virtual junction temperature
175
Logo
Date Code Location
yywwx
XXXXXXXXXXX
Part number
2D Data Matrix
Part number
M = Module
I = IGBT
X = XPT IGBT
A = Gen 1 / std
20 = Current Rating [A]
WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit
1200 = Reverse Voltage [V]
T = Thermistor \ Temperature sensor
MI = MiniPack2B
Unit
A
°C
°C
°C
g
Nm
mm
mm
V
V
mΩ
°C
Ordering
Standard
Part Number
MIXA20WB1200TMI
Marking on Product
MIXA20WB1200TMI
Delivery Mode
Blister
Quantity Code No.
20 514795
Temperature Sensor NTC
Symbol Definition
R25
B 25/50
resistance
temperature coefficient
Conditions
TVJ = 25°
min.
4.75
typ.
5
3375
max.
5.25
Unit
kΩ
K
Equivalent Circuits for Simulation
I V0
R0
V 0 max
R0 max
threshold voltage
slope resistance *
Rectifier
0.86
10
Brake
IGBT
1.1
86
* on die level
Brake
Diode
1.25
90
Inverter
IGBT
1.1
86
T VJ = 150 °C
Inverter
Diode
1.25
V
90 mΩ
105
104
R
[]
103
102
0
25 50 75 100 125 150
TC [°C]
Typ. NTC resistance vs. temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
5 Page 
Inverter Diode
20
15
IC
10
[A]
5
TVJ = 125°C
25°C
2.4
TVJ = 125°C
VR = 600 V
2.0
Qrr 1.6
[μC] 1.2
0.8
MIXA20WB1200TMI
tentative
40 A
20 A
10 A
24
TVJ = 125°C
VR = 600 V
20
IRR
16
[A]
12
40 A
20 A
10 A
0
0
Fig. 1
123
VCE [V]
Typ. Forward current
versus VF
0.4
200 300 400 500
-diF /dt [A/μs]
Fig. 2 Typ. reverse recovery
charge Qrr versus di/dt
8
200 300 400 500
-diF /dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus di/dt
600
40 A
500
trr 400 20 A
[ns] 300
10 A
200
TVJ = 125°C
VR = 600 V
0.6
TVJ = 125°C
VR = 600 V
40 A
0.5
Erec
0.4
[mJ]
20 A
0.3
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
100
200
300 400
-diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
500
0.2 10 A
200
300 400
-diF /dt [A/μs]
500
Fig. 6 Typ. recovery energy
Erec versus -di/dt
10
ZthJC
1
[K/W]
0.1
0.001
0.01
0.1
1
t [s]
Fig. 7 Transient thermal impedance junction to case
Ri
1 0.8
2 0.58
3 0.98
4 0.04
ti
0.002
0.03
0.03
0.08
10
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MIXA20WB1200TMI.PDF ] | |
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