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PDF D669 Data sheet ( Hoja de datos )
| Número de pieza | D669 | |
| Descripción | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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 1. - NPN Transistor - 2SD669  Hay una vista previa y un enlace de descarga de D669 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
2SD669/A
NPN SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC
2SB649/A
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 2SD669xG-x-AA3-R
- 2SD669xG-x-AB3-R
- 2SD669xG-x-AE3-R
- 2SD669xG-x-AE3-6-R
2SD669xL-x-T60-K
2SD669xG-x-T60-K
2SD669xL-x-T6C-K
2SD669xG-x-T6C-K
2SD669xL-x-T6S-K
2SD669xG-x-T6S-K
2SD669xL-x-T92-B
2SD669xG-x-T92-B
2SD669xL-x-T92-K
2SD669xG-x-T92-K
2SD669xL-x-T9N-B
2SD669xG-x-T9N-B
2SD669xL-x-T9N-K
2SD669xG-x-T9N-K
2SD669xL-x-TM3-T
2SD669xG-x-TM3-T
2SD669xL-x-TN3-R
2SD669xG-x-TN3-R
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
SOT-223
SOT-89
SOT-23
SOT-23
TO-126
TO-126C
TO-126S
TO-92
TO-92
TO-92NL
TO-92NL
TO-251
TO-252
Pin Assignment
123
BCE
BCE
BEC
EBC
ECB
ECB
ECB
ECB
ECB
ECB
ECB
BCE
BCE
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Bulk
Bulk
Bulk
Tape Box
Bulk
Tape Box
Bulk
Tube
Tape Reel
2SD669xG-x-AE3-6-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Green Package
(6) Collector-Emitter Voltage
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube
(2) refer to Pin Assignment
(3) AA3: SOT-223, AB3: SOT-89, AE3: SOT-23
(2) T60: TO-126, T6C: TO-126C, T6S: TO-126S
(2) TM3: TO-251, TN3: TO-252, T92: TO-92
(2) T9N: TO-92NL
(4) x: refer to Classification of hFE1
(5) G: Halogen Free and Lead Free, L: Lead Free
(6) A: 160V, Blank: 120V
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R204-005.R
1 page  
2SD669/A
TYPICAL CHARACTERISTICS
DC Current Transfer Ratio
30 vs. Collector Current
0
25
TA=75°C
0
20 25
0
15 -20
0
10
0
50
VCE=5V
1 1 3 10 30 100 300 1000 3000
Collector Current, IC (mA)
Base to Emitter Saturation Voltage
1.2 vs. Collector Current
IC=10IB
1.0
0.8 TC=-20°C
25
0.6 75
0.4
0.2
0
1 3 10 30 100 300 1,000
Collector Current, IC (mA)
Collector Output Capacitance
200
vs. Collector to Base Voltage
f=1MHz
100 IE=0
50
20
10
5
2
12
5 10 20 50 100
Collector to Base Voltage, VCB (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
Collector to Emitter Saturation
1.2
Voltage vs. Collector Current
IC=10 IB
1.0
0.8
0.6
0.4
0.2
0
1
T C=75°C
-20
3 10 30 100 300 1000
Collector Current, IC (mA)
Gain Bandwidth Product vs.
240 VCE=5V Collector Current
TA=25°C
200
160
120
80
40
0
10 30 100 300 1,000
Collector Current, IC (mA)
Safe Operating Area
1
380µ
s
1m
s
10m
s
0.1
DC
Notes:
1.TC=25°C
2.Single Pulse
0.01
100
101
102
Collector Voltage (V)
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet D669.PDF ] | |
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