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Número de pieza | AON7826 | |
Descripción | 20V Dual N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AON7826 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AON7826
20V Dual N-Channel MOSFET
General Description
The AON7826 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two low RDS (ON)
MOSFETs in a dual DFN3x3 package. The AON7826 is
well suited for use in compact DC/DC converter
applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS =2.5V)
RDS(ON) (at VGS =1.8V)
100% UIS Tested
100% Rg Tested
20V
22A
< 23mΩ
< 26mΩ
< 34mΩ
< 52mΩ
DFN 3x3A_Dual
Top View
Bottom View
Pin 1
Pin 1
D1
D1
S2
G2
Top View
G1
S1
D2
D2 G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±12
22
14
50
9
7
8
3
16.7
6.7
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
6.2
Max
40
75
7.5
D1 D2
G2
S1
S2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Dec. 2010
www.aosmd.com
Page 1 of 6
1 page AON7826
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TΑ=25°C
TΑ=150°C
10
TΑ=100°C
TΑ=125°C
25
20
15
10
5
10
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0 25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
25
20
15
10
5
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=75°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.00001
0.001
0.1
10 1000
0
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: Dec. 2010
www.aosmd.com
Page 5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AON7826.PDF ] |
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