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IXYX25N250CV1HV の電気的特性と機能

IXYX25N250CV1HVのメーカーはIXYSです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXYX25N250CV1HV
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXYX25N250CV1HV Datasheet, IXYX25N250CV1HV PDF,ピン配置, 機能
High Voltage
XPTTM IGBT
w/ Diode
Advance Technical Information
IXYX25N250CV1HV
VCES = 2500V
IC110 = 25A
VCE(sat)  4.0V
tfi(typ) = 246ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
Maximum Ratings
2500
2500
±20
±30
V
V
V
V
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
95 A
25 A
30 A
235 A
VCGlEam=p1e5dVI,nTdVuJc=tiv1e50L°oCa,dRG = 5
ICM
= 100
1500
A
V
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
937
-55 ... +175
175
-55 ... +175
300
260
W
°C
°C
°C
°C
°C
Mounting Force
20..120 /4.5..27
N/lb
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 100°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 25A, VGE = 15V, Note 1
TJ = 150°C
Characteristic Values
Min. Typ. Max.
2500
V
3.0 5.0 V
25 μA
100 μA
±100 nA
3.4 4.0 V
4.7 V
TO-247PLUS-HV
(IXYX...HV)
G
E
C
G = Gate
C = Collector
Tab
E = Emitter
Tab = Collector
Features
High Voltage Package
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
Advantages
Low Gate Drive Requirement
High Power Density
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
© 2016 IXYS CORPORATION, All Rights Reserved
DS100735.(6/16)

1 Page





IXYX25N250CV1HV pdf, ピン配列
IXYX25N250CV1HV
Fig. 1. Output Characteristics @ TJ = 25ºC
50
VGE = 25V
19V
15V
40 13V
11V 9V
30
20
7V
10
5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
50
VGE = 25V
19V
40
15V
13V
11V
9V
30
7V
20
10
5V
0
012345678
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
7
TJ = 25ºC
6
5
I C = 50A
4
25A
3
12.5A
2
5 7 9 11 13 15 17 19 21 23 25
VGE - Volts
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
250
VGE = 25V
19V
200 15V
13V
150 11V
100 9V
50
0
0
7V
5V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.2
2.0 VGE = 15V
1.8
I C = 50A
1.6
1.4
I C = 25A
1.2
1.0
0.8 I C = 12.5A
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
90
80
70
60
50
40
30 TJ = 150ºC
20 25ºC
- 40ºC
10
0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
VGE - Volts
© 2016 IXYS CORPORATION, All Rights Reserved


3Pages


IXYX25N250CV1HV 電子部品, 半導体
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
140 70
120 t r i
td(on)
TJ = 150ºC, VGE = 15V
100 VCE = 1250V
60
50
80
I C = 50A
60
I C = 25A
40
30
40 20
20 10
00
5 10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
120 24
t r i td(on)
100 RG = 5, VGE = 15V
VCE = 1250V
80
22
20
I C = 50A
60
18
40
I C = 25A
20
16
14
0 12
25 50 75 100 125 150
TJ - Degrees Centigrade
IXYX25N250CV1HV
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
90
80 t r i
td(on)
RG = 5, VGE = 15V
70 VCE = 1250V
60
50
TJ = 150ºC
40
30
20 TJ = 25ºC
10
0
10 15 20 25 30 35 40 45
IC - Amperes
28
26
24
22
20
18
16
14
12
10
50
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

6 Page



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部品番号部品説明メーカ
IXYX25N250CV1HV

IGBT ( Insulated Gate Bipolar Transistor )

IXYS
IXYS


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