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IXYP8N90C3のメーカーはIXYSです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。 |
部品番号 | IXYP8N90C3 |
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部品説明 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXYP8N90C3ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
900V XPTTM IGBT
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
IXYY8N90C3
IXYP8N90C3
VCES = 900V
IC110 = 8A
VCE(sat) 3.0V
tfi(typ) = 130ns
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTCC
= 25°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 30
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-220
Maximum Ratings
900 V
900 V
±20 V
±30 V
20 A
8A
48 A
4A
15 mJ
ICM = 16
@VCE VCES
125
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
0.35 g
3.00 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 8A, VGE = 15V, Note 1 TJ = 150C
Characteristic Values
Min. Typ. Max.
950 V
3.5 6.0 V
10 A
150 μA
100 nA
2.15 3.00 V
2.75 V
TO-252 (IXYY)
G
E
TO-220 (IXYP)
C (Tab)
GC E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100399B(12/14)
1 Page 16
14
12
10
8
6
4
2
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5 3 3.5
VCE - Volts
16
14
12
10
8
6
4
2
0
0
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
6V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
7 Gate-to-Emitter Voltage
TJ = 25ºC
6
5
4
I C = 16A
3
8A
2
4A
1
8 9 10 11 12 13 14 15
VGE - Volts
IXYY8N90C3
IXYP8N90C3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
45
40
VGE = 15V
35
30
25
20
15
10
5
0
0
13V
12V
11V
10V
9V
8V
7V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.0
VGE = 15V
1.8
1.6
I C = 16A
1.4
1.2 I C = 8A
1.0
0.8
I C = 4A
0.6
-50
-25
0
25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
20
18
16
14
12
10
8 TJ = 150ºC
6
25ºC
- 40ºC
4
2
0
3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5
VGE - Volts
© 2014 IXYS CORPORATION, All Rights Reserved
3Pages Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
200 100
t r i td(on) - - - -
160 TJ = 125ºC, VGE = 15V
VCE = 450V
80
I C = 16A
120 60
I C = 8A
80 40
40 20
00
30 60 90 120 150 180 210 240 270 300
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
80 18.5
t r i td(on) - - - -
70 RG = 30Ω, VGE = 15V
VCE = 450V
60
18.0
17.5
50
I C = 16A
40
17.0
16.5
30
I C = 8A
20
16.0
15.5
10
25
50 75 100
TJ - Degrees Centigrade
15.0
125
IXYY8N90C3
IXYP8N90C3
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
70 18.5
t r i td(on) - - - -
60 RG = 30Ω, VGE = 15V
VCE = 450V
50
18.0
17.5
TJ = 125ºC
40
17.0
30 16.5
TJ = 25ºC
20 16.0
10 15.5
0 15.0
8 9 10 11 12 13 14 15 16
IC - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_8N90C3(1D) 10-20-11
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IXYP8N90C3 | IGBT ( Insulated Gate Bipolar Transistor ) | IXYS |
IXYP8N90C3D1 | IGBT ( Insulated Gate Bipolar Transistor ) | IXYS |