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PDF IXYN120N120C3 Data sheet ( Hoja de datos )
| Número de pieza | IXYN120N120C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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1200V XPTTM IGBTs
GenX3TM
High-Speed IGBTs
for 20-50 kHz Switching
Advance Technical Information
IXYN120N120C3
VCES = 1200V
IC110 = 120A
VCE(sat) 3.20V
tfi(typ) = 96ns
E
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC= 25°C (Chip Capability)
Terminal Current Limit
TC= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 1
Clamped Inductive Load
TC = 25°C
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
240 A
200 A
120 A
700 A
60 A
2J
ICM = 240
VCE VCES
1200
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
30 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 500A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = IC110, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 A
1.5 mA
100 nA
2.55
3.40
3.20 V
V
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
Optimized for Low Switching Losses
Square RBSOA
miniBLOC, with Aluminium Nitride
Isolation
International Standard Package
Isolation Voltage 2500V~
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100560(9/13)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
10
9
Eoff Eon - - - -
TJ = 150ºC , VGE = 15V
8 VCE = 600V
I C = 100A
18
16
14
7 12
6 10
58
46
I C = 50A
34
22
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
8
Eoff Eon - - - -
7 RG = 1ΩVGE = 15V
VCE = 600V
6
IC = 100A
14
12
10
58
46
34
IC = 50A
22
10
25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
200 320
180
160
TJ = 150ºC
140
t f i td(off) - - - -
RG = 1Ω, VGE = 15V
VCE = 600V
300
280
260
120 240
100 220
80
60 TJ = 25ºC
200
180
40 160
20 140
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
IXYN120N120C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
8
Eoff Eon - - - -
7 RG = 1ΩVGE = 15V
VCE = 600V
6
5 TJ = 150ºC
14
12
10
8
46
3
TJ = 25ºC
2
4
2
10
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
200 800
t f i td(off) - - - -
180 TJ = 150ºC, VGE = 15V
VCE = 600V
160
700
600
140 I C = 50A
500
120
I C = 100A
400
100 300
80 200
60 100
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
160 320
150 t f i
td(off) - - - -
RG = 1Ω, VGE = 15V
140 VCE = 600V
130
I C = 50A
300
280
260
120 240
110 220
I C = 100A
100 200
90 180
80 160
70
25
50 75 100 125
TJ - Degrees Centigrade
140
150
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXYN120N120C3.PDF ] | |
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