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PDF IXYN100N120B3H1 Data sheet ( Hoja de datos )
| Número de pieza | IXYN100N120B3H1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
1200V XPTTM IGBT
GenX3TM w/ Diode
IXYN100N120B3H1
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
E
VCES
IC110
VCE(sat)
tfi(typ)
=
=
≤
=
1200V
76A
2.6V
240ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 1Ω
Clamped Inductive Load
TC = 25°C
50/60Hz
IISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
165 A
76 A
42 A
480 A
50 A
1.2 J
ICM = 200
≤@VCE VCES
690
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.3/11.5 Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
TJ = 150°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
50 μA
2.75 mA
±100 nA
2.20 2.60 V
2.76 V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z Optimized for 5-30kHZ Switching
z Square RBSOA
z 2500V~ Isolation Voltage
z Anti-Parallel Ultra Fast Diode
z Positive Thermal Coefficient of
Vce(sat)
z Avalanche Rated
z High Current Handling Capability
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100520A(03/13)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
13
Eoff Eon - - - -
12 TJ = 150ºC , VGE = 15V
VCE = 600V
11
10 I C = 100A
9
8 I C = 50A
7
6
123456789
RG - Ohms
18
16
14
12
10
8
6
4
10
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
12
11 Eoff
Eon - - - -
RG = 1Ω , VGE = 15V
10 VCE = 600V
9 I C = 100A
8
7
6
I C = 50A
5
4
25 50 75 100 125
TJ - Degrees Centigrade
16
14
12
10
8
6
4
2
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
600 290
550 t f i td(off) - - - - 270
RG = 1Ω , VGE = 15V
500
VCE = 600V
250
450 TJ = 150ºC
230
400 210
350
300 TJ = 25ºC
190
170
250 150
200 130
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
IXYN100N120B3H1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
12
11 Eoff
Eon - - - -
RG = 1Ω , VGE = 15V
10 VCE = 600V
9
TJ = 150ºC
16
14
12
10
88
76
6
TJ = 25ºC
4
52
40
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
800
700
t f i td(off) - - - -
TJ = 150ºC, VGE = 15V
600 VCE = 600V
I C = 50A
500
550
500
450
400
400 350
300 300
I C = 100A
200 250
100 200
0 150
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
700 340
t f i td(off) - - - -
600 RG = 1Ω , VGE = 15V
VCE = 600V
500 I C = 50A
300
260
400 220
300 180
200
I C = 100A
140
100
25
50 75 100 125
TJ - Degrees Centigrade
100
150
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
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