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IXYX200N65B3 の電気的特性と機能

IXYX200N65B3のメーカーはIXYSです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXYX200N65B3
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXYX200N65B3 Datasheet, IXYX200N65B3 PDF,ピン配置, 機能
Advance Technical Information
XPTTM 650V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 10-30kHz Switching
IXYK200N65B3
IXYX200N65B3
VCES =
IC110 =
VCE(sat) 
tfi(typ) =
650V
200A
1.70V
157ns
TO-264 (IXYK)
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
650 V
650 V
±20 V
±30 V
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 0
Clamped Inductive Load
VGE = 15V, VCE = 400V, TJ = 150°C
RG = 10, Non Repetitive
TC = 25°C
410
160
200
1100
100
1
ICM = 200
@VCE VCES
8
1560
-55 ... +175
175
-55 ... +175
A
A
A
A
A
J
A
μs
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
300
260
1.13/10
20..120 /4.5..27
°C
°C
Nm/lb.in
N/lb
TO-264
PLUS247
10 g
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
TJ = 150°C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
25 μA
2 mA
±100 nA
1.40
1.56
1.70 V
V
G
C
E
PLUS247 (IXYX)
Tab
G
G
C
E
Tab
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
International Standard Packages
Optimized for 10-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100697(12/15)

1 Page





IXYX200N65B3 pdf, ピン配列
Fig. 1. Output Characteristics @ TJ = 25ºC
300
VGE = 15V
250
12V 10V
11V
200 9V
150
8V
100
50 7V
6V
0
0 0.5 1 1.5 2 2.5 3
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
300
VGE = 15V
13V
250 11V
10V
9V
200
150
100
50
0
0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
7
8V
7V
6V
0.5 1 1.5 2 2.5 3 3.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
4
TJ = 25ºC
I C = 300A
200A
100A
8 9 10 11 12 13 14 15
VGE - Volts
IXYK200N65B3
IXYX200N65B3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
350
300
VGE = 15V
11V
10V
250
9V
200
150
8V
100
50 7V
6V
0
012345678
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
1.8
VGE = 15V
1.6
1.4
I C = 300A
9 10
1.2
1.0 I C = 200A
0.8
I C = 100A
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
250
200
150
TJ = 150ºC
25ºC
- 40ºC
100
50
0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved


3Pages


IXYX200N65B3 電子部品, 半導体
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
200 240
180 t r i
td(on) - - - -
160 TJ = 150ºC, VGE = 15V
VCE = 400V
140
I C = 100A
220
200
180
120 160
I C = 50A
100 140
80 120
60 100
40 80
20 60
0 40
0 5 10 15 20 25 30
RG - Ohms
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
140 70
t r i td(on) - - - -
120 RG = 0, VGE = 15V
VCE = 400V
66
100 I C = 100A
62
80
I C = 50A
60
58
54
40
25
50 75 100 125
TJ - Degrees Centigrade
50
150
IXYK200N65B3
IXYX200N65B3
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
120 66
110 t r i
td(on) - - - -
RG = 0, VGE = 15V
100 VCE = 400V
64
62
90
TJ = 25ºC
80
TJ = 150ºC
70
60
58
56
60 54
50 52
40 50
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_200N65B3(81) 12-21-15

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部品番号部品説明メーカ
IXYX200N65B3

IGBT ( Insulated Gate Bipolar Transistor )

IXYS
IXYS


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