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PDF IXYJ20N120C3D1 Data sheet ( Hoja de datos )
| Número de pieza | IXYJ20N120C3D1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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1200V XPTTM IGBT
GenX3TM w/ Diode
(Electrically Isolated Tab)
High-Speed IGBT
for 20-50 kHz Switching
IXYJ20N120C3D1
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
VISOL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
50/60 Hz, RM, t = 1min
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
21 A
9A
15 A
84 A
10 A
400 mJ
ICM = 40
@VCE VCES
105
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
2500
5
V~
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 A
350 μA
100 nA
3.4 V
4.0 V
VCES = 1200V
IC110 = 9A
VCE(sat) 3.4V
tfi(typ) = 108ns
ISO TO-247TM
E153432
G
CE
G = Gate
E = Emitter
Isolated Tab
C = Collector
Features
Optimized for Low Switching Losses
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
Avalanche Rated
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100486B(8/13)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
2
Eoff Eon - - - -
1.6 TJ = 150ºC , VGE = 15V
VCE = 600V
1.2 I C = 40A
0.8
I C = 20A
0.4
20
16
12
8
4
0
10 15 20 25 30 35 40 45 50
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1.4
Eoff Eon - - - -
1.2 RG = 10Ω , VGE = 15V
VCE = 600V
1.0
I C = 40A
0.8
0
55
12
10
8
6
0.6 4
IC = 20A
0.4 2
0.2
25
50 75 100 125
TJ - Degrees Centigrade
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
140 130
t f i td(off) - - - -
120
RG = 10Ω , VGE = 15V
120
VCE = 600V
100 TJ = 150ºC
110
80
60 TJ = 25ºC
100
90
40 80
20 70
20 22 24 26 28 30 32 34 36 38 40
IC - Amperes
IXYJ20N120C3D1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
1.4
Eoff Eon - - - -
1.2 RG = 10Ω , VGE = 15V
VCE = 600V
1.0
TJ = 150ºC
0.8
12
10
8
6
0.6 4
TJ = 25ºC
0.4 2
0.2 0
20 22 24 26 28 30 32 34 36 38 40
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
180 360
160 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
140 VCE = 600V
320
280
120 240
100
I C = 20A
80
60
I C = 40A
200
160
120
40 80
20 40
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
160 140
140 t f i
td(off) - - - -
RG = 10Ω , VGE = 15V
120 VCE = 600V
100
I C = 20A
130
120
110
80 100
60 90
I C = 40A
40 80
20
25
50 75 100 125
TJ - Degrees Centigrade
70
150
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXYJ20N120C3D1.PDF ] | |
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