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IXYH80N90C3のメーカーはIXYSです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。 |
部品番号 | IXYH80N90C3 |
| |
部品説明 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXYH80N90C3ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
XPTTM 900V IGBT
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
IXYT80N90C3
IXYH80N90C3
Symbol
VCES
VCGR
VGES
VGEM
IICLR25MS
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTeC rm=in2a5l°CCur(rCehnitpLCimaiptability)
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
900 V
900 V
±20 V
±30 V
165 A
160 A
80 A
360 A
ICM = 160
@VCE VCES
830
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
4g
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
60A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
950 V
3.5 5.5 V
25 A
750 A
100 nA
2.3 2.7 V
2.9 V
VCES = 900V
IC110 = 80A
VCE(sat) 2.7V
tfi(typ) = 86ns
TO-268 (IXYT)
G
E
C (Tab)
TO-247 (IXYH)
GCE
C (Tab)
G = Gate
E = Emiiter
C = Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100446B(12/15)
1 Page 160
140
120
100
80
60
40
20
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
14V
13V
12V
11V
10V
9V
8V
7V
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6
VCE - Volts
4
Fig. 3. Output Characteristics @ TJ = 150ºC
160
VGE = 15V
140 13V
12V
120
11V
100
80
10V
60
9V
40
8V
20
6V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
7
TJ = 25ºC
6
5
I C = 160A
4
80A
3 40A
2
1
8 9 10 11 12 13 14 15
VGE - Volts
IXYT80N90C3
IXYH80N90C3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300 VGE = 15V
14V
250 13V
200
150
100
50
0
0
12V
11V
10V
9V
7V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.2
VGE = 15V
2.0
1.8 I C = 160A
1.6
1.4
1.2 I C = 80A
1.0
0.8
I C = 40A
0.6
0.4
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
150
Fig. 6. Input Admittance
200
180
160
140
120
100
TJ = 150ºC
25ºC
- 40ºC
80
60
40
20
0
4 5 6 7 8 9 10 11 12
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
3Pages Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
180
160 t r i
td(on) - - - -
TJ = 150ºC, VGE = 15V
140 VCE = 450V
84
76
68
120
I C = 80A
60
100 52
80 44
I C = 40A
60 36
40 28
20 20
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
180
160 t r i
td(on) - - - -
RG = 2Ω, VGE = 15V
140 VCE = 450V
120
100
I C = 80A
37
36
35
34
33
80 32
60 31
40 30
20
I C = 40A
29
0 28
25 50 75 100 125 150
TJ - Degrees Centigrade
IXYT80N90C3
IXYH80N90C3
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
160
t r i td(on) - - - -
140 RG = 2Ω, VGE = 15V
VCE = 450V
120
TJ = 25ºC, 150ºC
40
38
36
100 34
80 32
60 30
40 28
20 26
40 50 60 70 80 90 100
IC - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_80N90C3(7D) 02-16-12
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IXYH80N90C3 | IGBT ( Insulated Gate Bipolar Transistor ) | IXYS |