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IXYH40N90C3D1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXYH40N90C3D1
部品説明 IGBT
メーカ IXYS
ロゴ IXYS ロゴ 



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IXYH40N90C3D1 Datasheet, IXYH40N90C3D1 PDF,ピン配置, 機能
900V XPTTM IGBT
GenX3TM w/ Diode
High-Speed IGBT
for 20-50 kHz Switching
Preliminary Technical Information
IXYH40N90C3D1
VCES =
IC110 =
V CE(sat)
tfi(typ) =
900V
40A
2.5V
110ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
900 V
900 V
±20 V
±30 V
90 A
40 A
25 A
180 A
ICM = 80
@VCE VCES
500
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
950 V
3.5 5.5 V
25 μA
750 μA
±100 nA
2.2 2.5 V
2.9 V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Positive Thermal Coefficient of
Vce(sat)
z Anti-Parallel Ultra Fast Diode
z High Current Handling Capability
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2012 IXYS CORPORATION, All Rights Reserved
DS100441A(02/13)

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