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IXYH40N90C3 の電気的特性と機能

IXYH40N90C3のメーカーはIXYSです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXYH40N90C3
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXYH40N90C3 Datasheet, IXYH40N90C3 PDF,ピン配置, 機能
900V XPTTM IGBT
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
Preliminary Technical Information
IXYH40N90C3
VCES =
IC110 =
V CE(sat)
tfi(typ) =
900V
40A
2.5V
110ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 5Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
900 V
900 V
±20 V
±30 V
105 A
40 A
200 A
ICM = 80
@VCE VCES
600
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
6g
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Positive Thermal Coefficient of
Vce(sat)
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
950 V
3.5 5.5 V
25 μA
500 μA
±100 nA
2.2 2.5 V
2.9 V
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100444A(02/13)

1 Page





IXYH40N90C3 pdf, ピン配列
IXYH40N90C3
Fig. 1. Output Characteristics @ TJ = 25ºC
80
70
VGE = 15V
13V
12V
60 11V
50
40 10V
30
20 9V
10 8V
0 7V
0 0.5 1 1.5 2 2.5 3 3.5 4
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
80
VGE = 15V
70 13V
12V
60 11V
50
10V
40
9V
30
20 8V
10 7V
0 6V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
9
8 TJ = 25ºC
7
6
5
I C = 80A
4
3 40A
2
20A
1
8 9 10 11 12 13 14 15
VGE - Volts
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
200 VGE = 15V
14V
160
13V
120
12V
80
40
0
0
11V
10V
9V
7V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.2
2.0 VGE = 15V
1.8
I C = 80A
1.6
1.4
1.2 I C = 40A
1.0
0.8 I C = 20A
0.6
0.4
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
150
Fig. 6. Input Admittance
100
90
80
70
60
50
40
TJ = 150ºC
25ºC
30
- 40ºC
20
10
0
4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved


3Pages


IXYH40N90C3 電子部品, 半導体
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
280 80
t r i td(on) - - - -
240 TJ = 125ºC, VGE = 15V
VCE = 450V
200
I C = 80A
70
60
160 50
120 40
I C = 40A
80 30
40 20
0 10
5 10 15 20 25 30
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
240 36
t r i td(on) - - - -
200 RG = 5, VGE = 15V
VCE = 450V
34
160
I C = 80A
32
120 30
80 28
40
I C = 40A
26
0 24
25 50 75 100 125
TJ - Degrees Centigrade
IXYH40N90C3
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
200 50
t r i td(on) - - - -
160 RG = 5, VGE = 15V
VCE = 450V
25ºC TJ 125ºC
120
40
30
80 20
40 10
00
20 30 40 50 60 70 80
IC - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_40N90C3D1(5D) 02-03-12

6 Page



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共有リンク

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部品番号部品説明メーカ
IXYH40N90C3

IGBT ( Insulated Gate Bipolar Transistor )

IXYS
IXYS
IXYH40N90C3D1

IGBT ( Insulated Gate Bipolar Transistor )

IXYS
IXYS


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