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PDF IXYH40N65C3 Data sheet ( Hoja de datos )
| Número de pieza | IXYH40N65C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
IXYH40N65C3
VCES = 650V
IC110 = 40A
VCE(sat) 2.35V
tfi(typ) = 20ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
80 A
40 A
180 A
20 A
300 mJ
ICM = 80
@VCE VCES
5
A
μs
300
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
500 A
100 nA
2.0 2.35 V
2.4 V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
International Standard Package
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2014 IXYS CORPORATION, All Rights Reserved
DS100570C(8/14)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
2.0
1.8 Eoff
Eon - - - -
1.6 TJ = 150ºC , VGE = 15V
VCE = 400V
1.4
I C = 60A
1.2
1.0
0.8
I C = 30A
0.6
0.4
0.2
10 15 20 25 30 35 40 45 50
RG (Ω)
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
1.6
1.4 Eoff
Eon - - - -
RG = 10Ω , VGE = 15V
1.2 VCE = 400V
9
8
7
6
5
4
3
2
1
0
55
4.5
4.0
3.5
1.0
I C = 60A
0.8
3.0
2.5
0.6 2.0
0.4
IC = 30A
0.2
1.5
1.0
0.0 0.5
25 50 75 100 125 150
TJ (ºC)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
80 200
70
tfi
td(off) - - - -
180
RG = 10Ω , VGE = 15V
60
VCE = 400V
160
50 140
TJ = 150ºC
40 120
30 100
TJ = 25ºC
20 80
10 60
0 40
15 20 25 30 35 40 45 50 55 60
IC (A)
© 2014 IXYS CORPORATION, All Rights Reserved
IXYH40N65C3
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
2.0
Eoff Eon - - - -
1.6 RG = 10Ω , VGE = 15V
VCE = 400V
1.2
TJ = 150ºC
0.8
5
4
3
2
0.4
TJ = 25ºC
1
0.0
15 20 25 30 35 40 45 50 55
IC (A)
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
90
80 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
70 VCE = 400V
0
60
400
360
320
60
I C = 60A
50
280
240
40
I C = 30A
200
30 160
20 120
10 80
10 15 20 25 30 35 40 45 50 55
RG (Ω)
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
80 150
70 t f i
td(off) - - - -
RG = 10Ω , VGE = 15V
VCE = 400V
60
140
130
50 120
40
I C = 30A, 60A
30
110
100
20 90
10 80
25 50 75 100 125 150
TJ (ºC)
5 Page | ||
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| PDF Descargar | [ Datasheet IXYH40N65C3.PDF ] | |
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