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IXYH40N120C3D1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXYH40N120C3D1
部品説明 IGBT
メーカ IXYS
ロゴ IXYS ロゴ 



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IXYH40N120C3D1 Datasheet, IXYH40N120C3D1 PDF,ピン配置, 機能
1200V XPTTM IGBT
GenX3TM w/ Diode
IXYH40N120C3D1
High-Speed IGBT
for 20-50 kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IICF19100
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
TC = 25°C (Chip Capability)
TTCC
= 90°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
80 A
40 A
25 A
160 A
20 A
400 mJ
ICM = 80
@VCE VCES
480
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 A
750 μA
100 nA
2.9 3.5 V
3.7 V
VCES = 1200V
IC90 = 40A
VCE(sat)  3.5V
tfi(typ) = 50ns
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
Avalanche Rated
High Current Handling Capability
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2016 IXYS CORPORATION, All Rights Reserved
DS100417C(5/16)

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