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PDF IXYH40N120C3D1 Data sheet ( Hoja de datos )
| Número de pieza | IXYH40N120C3D1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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1200V XPTTM IGBT
GenX3TM w/ Diode
IXYH40N120C3D1
High-Speed IGBT
for 20-50 kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IICF19100
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
TC = 25°C (Chip Capability)
TTCC
= 90°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
80 A
40 A
25 A
160 A
20 A
400 mJ
ICM = 80
@VCE VCES
480
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 A
750 μA
100 nA
2.9 3.5 V
3.7 V
VCES = 1200V
IC90 = 40A
VCE(sat) 3.5V
tfi(typ) = 50ns
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
Avalanche Rated
High Current Handling Capability
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2016 IXYS CORPORATION, All Rights Reserved
DS100417C(5/16)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
7
Eoff Eon
6 TJ = 150ºC , VGE = 15V
VCE = 600V
5
I C = 80A
4
3
2
I C = 40A
1
28
24
20
16
12
8
4
0
10 15 20 25 30 35 40 45 50
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
5
Eoff Eon
4 RG = 10ΩVGE = 15V
VCE = 600V
I C = 80A
0
55
20
16
3 12
28
1
IC = 40A
4
00
25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
240
t f i td(off)
200 RG = 10Ω, VGE = 15V
VCE = 600V
160 TJ = 150ºC
220
200
180
120 160
80 140
40 TJ = 25ºC
120
0 100
20 30 40 50 60 70 80
IC - Amperes
IXYH40N120C3D1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
5
Eoff Eon
4 RG = 10ΩVGE = 15V
VCE = 600V
TJ = 150ºC
3
20
16
12
28
TJ = 25ºC
14
00
20 30 40 50 60 70 80
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
200 500
180 t f i
td(off)
TJ = 150ºC, VGE = 15V
160 VCE = 600V
450
400
140
I C = 40A
120
350
300
100 250
80
I C = 80A
60
200
150
40 100
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
160 170
t f i td(off)
140 RG = 10Ω, VGE = 15V
VCE = 600V
120
I C = 40A
160
150
100 140
80
I C = 80A
130
60 120
40
25
50 75 100 125
TJ - Degrees Centigrade
110
150
© 2016 IXYS CORPORATION, All Rights Reserved
5 Page | ||
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| PDF Descargar | [ Datasheet IXYH40N120C3D1.PDF ] | |
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