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PDF IXYQ30N65B3D1 Data sheet ( Hoja de datos )
| Número de pieza | IXYQ30N65B3D1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Advance Technical Information
XPTTM 650V IGBT
GenX3TM w/ Diode
Extreme Light Punch Through
IGBT for 5-30kHz Switching
IXYH30N65B3D1
IXYQ30N65B3D1
VCES = 650V
IC110 = 30A
VCE(sat) 2.1V
tfi(typ) = 33ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-247
TO-3P
Maximum Ratings
650 V
650 V
±20 V
±30 V
70 A
30 A
50 A
160 A
10 A
300 mJ
ICM = 60
@VCE VCES
5
A
μs
270
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6.0
5.5
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
TO-247 (IXYH)
G
CE
TO-3P (IXYQ)
Tab
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for Low 5-30kHz Switching
Square RBSOA
Anti-Parallel Fast Diode
Avalanche Rated
Short Circuit Capability
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
1.5 mA
100 nA
1.8 2.1 V
2.2 V
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100637(11/14)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
2.8
Eoff Eon - - - -
2.4 TJ = 150ºC , VGE = 15V
VCE = 400V
I C = 60A
2.0
10
8
6
1.6 4
I C = 30A
1.2 2
0.8
10 20 30 40 50 60 70
RG (Ω)
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
2.8
Eoff Eon - - - -
2.4 RG = 10Ω , VGE = 15V
VCE = 400V
2.0
0
80
7
6
5
1.6
I C = 60A
1.2
4
3
0.8
IC = 30A
0.4
2
1
0.0 0
25 50 75 100 125 150
TJ (ºC)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
160 200
140
tfi
td(off) - - - -
180
RG = 10Ω , VGE = 15V
120
VCE = 400V
160
100 140
80 TJ = 150ºC
120
60
40 TJ = 25ºC
100
80
20 60
0 40
15 20 25 30 35 40 45 50 55 60
IC (A)
© 2014 IXYS CORPORATION, All Rights Reserved
IXYH30N65B3D1
IXYQ30N65B3D1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
2.4
Eoff Eon - - - -
2.0 RG = 10Ω , VGE = 15V
VCE = 400V
1.6
TJ = 150ºC
6
5
4
1.2 3
TJ = 25ºC
0.8 2
0.4 1
0.0 0
15 20 25 30 35 40 45 50 55 60
IC (A)
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
140 640
130 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
120 VCE = 400V
560
480
110 400
I C = 30A
100 320
90
I C = 60A
240
80 160
70 80
60 0
10 20 30 40 50 60 70 80
RG (Ω)
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
160
140 t f i
td(off) - - - -
RG = 10Ω , VGE = 15V
120 VCE = 400V
100
140
130
120
110
80 100
60 I C = 30A, 60A
40
90
80
20 70
0 60
25 50 75 100 125 150
TJ (ºC)
5 Page | ||
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