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IXYA8N90C3D1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXYA8N90C3D1
部品説明 IGBT
メーカ IXYS
ロゴ IXYS ロゴ 



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IXYA8N90C3D1 Datasheet, IXYA8N90C3D1 PDF,ピン配置, 機能
900V XPTTM IGBT
GenX3TM w/ Diode
High-Speed IGBT
for 20-50 kHz Switching
IXYA8N90C3D1
IXYP8N90C3D1
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
900 V
900 V
±20 V
±30 V
TC = 25°C
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 30
Clamped Inductive Load
TC = 25°C
20
8
12
48
4
15
ICM = 16
@VCE VCES
125
-55 ... +175
175
-55 ... +175
A
A
A
A
A
mJ
A
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Torque (TO-220)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
Nm/lb.in.
N/lb.
TO-263
TO-220
2.5 g
3.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 8A, VGE = 15V, Note 1
TJ = 125C
Characteristic Values
Min. Typ. Max.
950 V
3.5 6.0 V
60 A
400 μA
100 nA
2.15
2.60
3.00 V
V
VCES = 900V
IC110 = 8A
VCE(sat)  3.0V
tfi(typ) = 130ns
TO-263 AA (IXYA)
G
E
C (Tab)
TO-220AB (IXYP)
GC E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
Avalanche Rated
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100400C(12/14)

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