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PDF IXYH60N90C3 Data sheet ( Hoja de datos )
| Número de pieza | IXYH60N90C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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XPTTM 900V IGBT
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
Preliminary Technical Information
IXYH60N90C3
VCES =
IC110 =
V ≤CE(sat)
tfi(typ) =
900V
60A
2.7V
88ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 3Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
900 V
900 V
±20 V
±30 V
140 A
60 A
310 A
ICM = 120
≤@VCE VCES
750
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
6g
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Positive Thermal Coefficient of
Vce(sat)
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
60A,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
950 V
3.5 5.5 V
25 μA
750 μA
±100 nA
2.4 2.7 V
2.9 V
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100452A(02/13)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
3.5
Eoff Eon - - - -
3.0 TJ = 150ºC , VGE = 15V
VCE = 450V
2.5
I C = 60A
12
10
8
2.0 6
1.5 4
1.0
I C = 30A
2
0.5
0
0
5 10 15 20 25 30 35
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
3.5
Eoff Eon - - - -
3.0 RG = 3Ω , VGE = 15V
VCE = 450V
2.5
2.0
I C = 60A
7
6
5
4
1.5 3
1.0 2
I C = 30A
0.5 1
0.0
25
50 75 100 125
TJ - Degrees Centigrade
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
300 210
t f i td(off) - - - -
250 RG = 3Ω , VGE = 15V
VCE = 450V
200
180
150
TJ = 150ºC
150 120
100 90
TJ = 25ºC
50 60
0 30
30 40 50 60 70 80 90
IC - Amperes
IXYH60N90C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
5
Eoff Eon - - - -
4 RG = 3Ω , VGE = 15V
VCE = 450V
3
2 TJ = 150ºC
1
TJ = 25ºC
10
8
6
4
2
00
30 40 50 60 70 80 90
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
275
250 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
225 VCE = 450V
360
320
280
200 240
175
I C = 30A
200
150 160
125 I C = 60A
100
120
80
75
0
40
5 10 15 20 25 30 35
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
200 180
t f i td(off) - - - -
175 RG = 3Ω , VGE = 15V
VCE = 450V
150
160
140
I C = 60A
125
120
I C = 30A
100 100
75 80
50
25
50 75 100 125
TJ - Degrees Centigrade
60
150
© 2013 IXYS CORPORATION, All Rights Reserved
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| PDF Descargar | [ Datasheet IXYH60N90C3.PDF ] | |
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