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Datasheet IXYA20N65C3D1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IXYA20N65C3D1 | IGBT, Insulated Gate Bipolar Transistor XPTTM 650V IGBT GenX3TM w/Diode
IXYA20N65C3D1 IXYP20N65C3D1
Extreme Light Punch Through IGBT for 20-60kHz Switching
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25� |  IXYS | igbt |
IXY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IXYA15N65C3D1 | IGBT, Insulated Gate Bipolar Transistor Preliminary Technical Information
XPTTM 650V IGBT GenX3TM w/Diode
IXYA15N65C3D1 IXYP15N65C3D1
Extreme Light Punch Through IGBT for 20-60kHz Switching
VCES = 650V IC110 = 15A VCE(sat) 2.5V tfi(typ) = 28ns
TO-263 AA (IXYA)
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IIFC1M10
IA EAS
SSOA (R IXYS igbt | | |
| 2 | IXYA20N120C3HV | 1200V XPT GenX3 IGBTs 1200V XPTTM GenX3TM IGBTs
High-Speed IGBT for 20-50 kHz Switching
IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3
VCES = IC110 = VCE(sat) tfi(typ) =
1200V 20A 3.4V 108ns
TO-263HV (IXYA) G E Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight M  IXYS Corporation igbt | | |
| 3 | IXYA20N65B3 | IGBT, Insulated Gate Bipolar Transistor Advance Technical Information
XPTTM 650V IGBT GenX3TM
Extreme Light Punch Through IGBT for 5-30kHz Switching
IXYA20N65B3 IXYP20N65B3 IXYH20N65B3
VCES = 650V IC110 = 20A VCE(sat) 2.10V tfi(typ) = 87ns
TO-263 (IXYA)
Symbol
VCES VCGR
VGES VGEM
IICC12150 ICM
IA EAS
SSOA (RBSOA)
tsc (SCS IXYS igbt | | |
| 4 | IXYA20N65C3 | IGBT, Insulated Gate Bipolar Transistor Preliminary Technical Information
XPTTM 650V IGBT GenX3TM
Extreme Light Punch Through IGBT for 20-60 kHz Switching
IXYA20N65C3 IXYH20N65C3
VCES = 650V IC110 = 20A VCE(sat) 2.50V tfi(typ) = 28ns
TO-263 AA (IXYA)
Symbol
VCES VCGR
VGES VGEM
IC25 IICCM110
IA EAS
SSOA (RBSOA)
tsc (SCSOA IXYS igbt | | |
| 5 | IXYA20N65C3D1 | IGBT, Insulated Gate Bipolar Transistor XPTTM 650V IGBT GenX3TM w/Diode
IXYA20N65C3D1 IXYP20N65C3D1
Extreme Light Punch Through IGBT for 20-60kHz Switching
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25� IXYS igbt | | |
| 6 | IXYA50N65C3 | IGBT, Insulated Gate Bipolar Transistor Preliminary Technical Information
XPTTM 650V IGBT GenX3TM
Extreme Light Punch Through IGBT for 20-60kHz Switching
IXYA50N65C3 IXYP50N65C3 IXYH50N65C3
VCES = 650V IC110 = 50A VCE(sat) 2.10V tfi(typ) = 26ns
TO-263 (IXYA)
Symbol
VCES VCGR
VGES VGEM
IICC12150 ICM
IA EAS
SSOA (RBSOA)
tsc IXYS igbt | | |
| 7 | IXYA8N90C3D1 | IGBT, Insulated Gate Bipolar Transistor 900V XPTTM IGBT GenX3TM w/ Diode
High-Speed IGBT for 20-50 kHz Switching
IXYA8N90C3D1 IXYP8N90C3D1
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110 ICM
IA EAS
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
Cont IXYS igbt | |
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