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PDF IXYA20N65C3 Data sheet ( Hoja de datos )
| Número de pieza | IXYA20N65C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
IXYA20N65C3
IXYH20N65C3
VCES = 650V
IC110 = 20A
VCE(sat) 2.50V
tfi(typ) = 28ns
TO-263 AA (IXYA)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IICCM110
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-263
TO-247
Maximum Ratings
650 V
650 V
±20 V
±30 V
50 A
20 A
105 A
10 A
200 mJ
ICM = 40
VCE VCES
10
A
μs
230
-55 ... +175
175
-55 ... +175
300
260
1.13/10
2.5
6.0
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
150 A
100 nA
2.27
2.44
2.50 V
V
G
E
C (Tab)
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
International Standard Packages
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2015 IXYS CORPORATION, All Rights Reserved
DS100543C(01/15)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
1.6
1.4 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
1.2 VCE = 400V
7
6
5
1.0 I C = 40A
4
0.8 3
0.6 2
I C = 20A
0.4 1
0.2
20 30 40 50 60 70 80 90
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
1.6
1.4 Eoff
Eon - - - -
RG = 20Ω , VGE = 15V
1.2 VCE = 400V
0
100
4.0
3.5
3.0
1.0
0.8 I C = 40A
2.5
2.0
0.6 1.5
0.4
IC = 20A
0.2
1.0
0.5
0.0
25
50 75 100
TJ - Degrees Centigrade
125
0.0
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
55 130
50
tfi
td(off) - - - -
120
RG = 20Ω , VGE = 15V
45
VCE = 400V
110
40 100
TJ = 150ºC
35 90
30 80
25
TJ = 25ºC
70
20 60
10 15 20 25 30 35 40
IC - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXYA20N65C3
IXYH20N65C3
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
1.2
Eoff Eon - - - -
1.0 RG = 20Ω , VGE = 15V
VCE = 400V
0.8
TJ = 150ºC
2.4
2.0
1.6
0.6 1.2
TJ = 25ºC
0.4 0.8
0.2 0.4
0.0 0.0
10 15 20 25 30 35 40
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
55 270
50 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
45 VCE = 400V
240
210
40 I C = 20A
180
35 150
30
I C = 40A
25
120
90
20 60
20 30 40 50 60 70 80 90 100
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
44 112
t f i td(off) - - - -
40 RG = 20Ω , VGE = 15V
VCE = 400V
36
I C = 20A
104
96
32 88
I C = 40A
28 80
24 72
20
25
50 75 100 125
TJ - Degrees Centigrade
64
150
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| PDF Descargar | [ Datasheet IXYA20N65C3.PDF ] | |
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