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IXXH30N65B4 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXXH30N65B4
部品説明 650V IGBTs
メーカ IXYS
ロゴ IXYS ロゴ 



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IXXH30N65B4 Datasheet, IXXH30N65B4 PDF,ピン配置, 機能
Preliminary Technical Information
XPTTM 650V IGBT
GenX4TM
Extreme Light Punch Through
IGBT for 5-30kHz Switching
IXXH30N65B4
C
G
E
VCES =
IC110 =
V CE(sat)
tfi(typ) =
650V
30A
2.0V
57ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 15Ω
Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C
RG = 82Ω, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
65 A
30 A
146 A
ICM = 60
@VCE VCES
10
A
μs
230
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for 5-30kHz Switching
z Square RBSOA
z Short Circuit Capability
z International Standard Package
Advantages
z High Power Density
z Extremely Rugged
z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
650 V
4.0 6.5 V
10 μA
250 μA
±100 nA
1.66
1.87
2.00 V
V
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100515A(02/13)

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