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PDF IXXH30N65B4 Data sheet ( Hoja de datos )
| Número de pieza | IXXH30N65B4 | |
| Descripción | 650V IGBTs | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
XPTTM 650V IGBT
GenX4TM
Extreme Light Punch Through
IGBT for 5-30kHz Switching
IXXH30N65B4
C
G
E
VCES =
IC110 =
V ≤CE(sat)
tfi(typ) =
650V
30A
2.0V
57ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 15Ω
Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C
RG = 82Ω, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
65 A
30 A
146 A
ICM = 60
≤@VCE VCES
10
A
μs
230
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for 5-30kHz Switching
z Square RBSOA
z Short Circuit Capability
z International Standard Package
Advantages
z High Power Density
z Extremely Rugged
z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
650 V
4.0 6.5 V
10 μA
250 μA
±100 nA
1.66
1.87
2.00 V
V
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100515A(02/13)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
2.4
Eoff Eon - - - -
2.0 TJ = 150ºC , VGE = 15V
VCE = 400V
1.6
I C = 60A
1.2
13
11
9
7
0.8 5
0.4
I C = 30A
3
0.0 1
15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1.6
1.4 Eoff
Eon - - - -
RG = 15Ω , VGE = 15V
1.2 VCE = 400V
I C = 60A
1.0
8
7
6
5
0.8 4
0.6 3
0.4
I C = 30A
2
0.2 1
0.0
25
50 75 100
TJ - Degrees Centigrade
125
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
240 160
t f i td(off) - - - -
220
RG = 15Ω , VGE = 15V
140
VCE = 400V
200 120
180 100
160 80
TJ = 150ºC, 25ºC
140 60
120 40
100 20
15 20 25 30 35 40 45 50 55 60
IC - Amperes
IXXH30N65B4
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
2.0
Eoff Eon - - - -
RG = 15Ω , VGE = 15V
1.5 VCE = 400V
8
6
1.0
TJ = 150ºC
4
0.5
TJ = 25ºC
2
0.0 0
15 20 25 30 35 40 45 50 55 60
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
120
t f i td(off) - - - -
110 TJ = 150ºC, VGE = 15V
VCE = 400V
100
90 I C = 30A
400
350
300
250
80 200
70 I C = 60A
60
150
100
50 50
15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
160 200
t f i td(off) - - - -
140
RG = 15Ω , VGE = 15V
180
VCE = 400V
120 160
100
I C = 30A
80 I C = 60A
60
140
120
100
40
25
50 75 100 125
TJ - Degrees Centigrade
80
150
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXXH30N65B4.PDF ] | |
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