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Datasheet CEM8958 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CEM8958 | Dual Enhancement Mode Field Effect Transistor(N and P Channel) |  Chino-Excel Technology | transistor |
| 2 | CEM8958A | Dual Enhancement Mode Field Effect Transistor CEM8958A
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
FEATURES
30V, 6.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V.
-30V, -4.8A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High |  CET | transistor |
CEM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CEM0215 | N-Channel Enhancement Mode Field Effect Transistor CEM0215
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
CET transistor | | |
| 2 | CEM0310 | Single N-Channel Enhancement Mode Field Effect Transistor www.DataSheet.co.kr
Single N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 2.6A, RDS(ON) = 180mΩ @VGS = 10V.
CEM0310
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8 D 7 CET transistor | | |
| 3 | CEM0410 | Single N-Channel Enhancement Mode Field Effect Transistor www.DataSheet.co.kr
Single N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 3.4A, RDS(ON) = 120mΩ @VGS = 10V.
CEM0410
PRELIMINARY
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Pack CET transistor | | |
| 4 | CEM0415 | N-Channel Enhancement Mode Field Effect Transistor CEM0415
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
150V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 6V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount P CET transistor | | |
| 5 | CEM1010 | Single N-Channel Enhancement Mode Field Effect Transistor CEM1010
Single N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 9.5A, RDS(ON) = 15.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package.
DD D D 8 Chino-Excel Technology transistor | | |
| 6 | CEM11C2 | Dual Enhancement Mode Field Effect Transistor www.DataSheet4U.net
CEM11C2
Jul. 2002
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
5
FEATURES
30V ,7A , RDS(ON)=30m Ω @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. -20V , -4.3A , RDS(ON)=90m Ω @VGS=-4.5V. RDS(ON)=120mΩ @VGS=-2.5V. Super high dense cell design for extremely low RDS CET transistor | | |
| 7 | CEM11M2 | Dual N-Channel Enhancement Mode Field Effect Transistor www.DataSheet4U.net
CET transistor | |
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