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IXXA30N65C3HV PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXXA30N65C3HV
部品説明 650V IGBTs
メーカ IXYS
ロゴ IXYS ロゴ 



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IXXA30N65C3HV Datasheet, IXXA30N65C3HV PDF,ピン配置, 機能
Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM
IXXA30N65C3HV
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
VCES =
IC110 =
V CE(sat)
tfi(typ) =
650V
30A
2.2V
32ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10Ω
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82Ω, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Maximum Ratings
650 V
650 V
±20 V
±30 V
52 A
30 A
113 A
20 A
250 mJ
ICM = 48
@VCE VCES
10
A
μs
230
-55 ... +175
175
-55 ... +175
300
260
2.5
W
°C
°C
°C
°C
°C
g
TO-263
G
E
D (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z Optimized for 20-60kHz Switching
z Square RBSOA
z Avalanche Capability
z Short Circuit Capability
z High Voltage Package
Advantages
z High Power Density
z 175°C Rated
z Extremely Rugged
z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
24A,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
650 V
3.0 5.5 V
10 μA
250 μA
±100 nA
1.85
2.30
2.20 V
V
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100525A(04/13)

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